Inchange Semiconductor Product Specification 2SC3447 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・High breakdown voltage and high reliability ・Fast switching speed. ・Wide ASO (Safe Operating Area) APPLICATIONS ・500V/5A switching regulator applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter 体 导 半 Absolute maximum ratings(Ta=25℃) 固电 SYMBOL VCBO VCEO VEBO EM S E NG PARAMETER D N O IC R O T UC CONDITIONS VALUE UNIT Collector-base voltage Open emitter 800 V Collector-emitter voltage Open base 500 V Emitter-base voltage Open collector 7 V A H C IN IC Collector current 5 A ICM Collector current-peak 10 A IB Base current 2 A PC Collector dissipation 50 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC3447 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=5mA ; RBE=∞ 500 V V(BR)CBO Collector-base breakdown voltage IC=1mA ; IE=0 800 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ; IC=0 7 V VCEsat Collector-emitter saturation voltage IC=3A; IB=0.6A 1.0 V VBEsat Base-emitter saturation voltage IC=3A; IB=0.6A 1.5 V ICBO Collector cut-off current VCB=500V ;IE=0 10 μA IEBO Emitter cut-off current VEB=5V; IC=0 10 μA hFE-1 DC current gain IC=0.6A ; VCE=5V hFE-2 DC current gain IC=3A ; VCE=5V fT COB 体 导 半 Transition frequency 固电 A H C IN tstg tf Turn-on time Storage time IE=0;f=1MHz ; VCB=10V VCC=200V; IC=4A IB1=0.8A;IB2=-1.6A; RL=50Ω Fall time hFE-1 classifications L M N 15-30 20-40 30-50 2 MIN TYP. 15 MAX UNIT 50 R O T UC D N O IC IC=0.6A ; VCE=10V EM S E NG Output capacitance Switching times ton CONDITIONS 8 18 MHz 80 pF 0.5 μs 3.0 μs 0.3 μs Inchange Semiconductor Product Specification 2SC3447 Silicon NPN Power Transistors PACKAGE OUTLINE 体 导 半 固电 EM S E NG A H C IN R O T UC D N O IC Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 Inchange Semiconductor Product Specification 2SC3447 Silicon NPN Power Transistors 体 导 半 固电 EM S E NG A H C IN 4 D N O IC R O T UC