JMNIC 2SA1072

JMnic
Product Specification
2SA1072 2SA1073
Silicon PNP Power Transistors
DESCRIPTION
・With TO-3 package
・Complement to type 2SC2522/2523
・Excellent safe operating area
・Fast switching speed
APPLICATIONS
・High frequency power amplifier
・Audio power amplifiers
・Switching regulators
・DC-DC converters
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
2SA1072
VCBO
Collector-base voltage
-120
Open base
2SA1073
VEBO
Emitter-base voltage
V
-160
2SA1072
Collector-emitter voltage
UNIT
-120
Open emitter
2SA1073
VCEO
VALUE
V
-160
Open collector
-7
V
-12
A
120
W
IC
Collector current
PC
Collector power dissipation
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~150
℃
TC=25℃
JMnic
Product Specification
2SA1072 2SA1073
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
PARAMETER
Collector-emitter
breakdown voltage
CONDITIONS
2SA1072
Collector-base
breakdown voltage
TYP.
MAX
UNIT
-120
IC=-1mA ;RBE=∞
V
-160
2SA1073
V(BR)CBO
MIN
2SA1072
-120
IC=-50μA ;IE=0
2SA1073
V
-160
Emitter-base breakdown voltage
IE=-50μA ;IC=0
Collector-emitter saturation voltage
IC=-5A ;IB=-0.5A
-0.9
-1.8
V
VBE
Base-emitter on voltage
IC=-5A ; VCE=-5V
-1.25
-1.7
V
ICBO
Collector
cut-off current
-50
μA
-1
mA
-50
μA
V(BR)EBO
VCEsat
ICEO
Collector
cut-off current
2SA1072
-7
V
VCB=-120V; IE=0
2SA1073
VCB=-160V; IE=0
2SA1072
VCE=-120V; RBE=∞
2SA1073
VCE=-160V; RBE=∞
IEBO
Emitter cut-off current
VEB=-7V; IC=0
hFE-1
DC current gain
IC=-1A ; VCE=-5V
60
hFE-2
DC current gain
IC=-7A ; VCE=-5V
40
COB
Output capacitance
IE=0 ; VCB=-10V;f=1MHz
300
pF
fT
Transition frequency
IC=-1A ; VCE=-10V;f=10MHz
60
MHz
0.15
μs
0.50
μs
0.11
μs
200
Switching times
tr
tstg
tf
Rise time
Storage time
IC=-7.5A
IB1=-IB2=-0.75A;RL=4Ω
Fall time
2
JMnic
Product Specification
2SA1072 2SA1073
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3