JMnic Product Specification 2SA1072 2SA1073 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2SC2522/2523 ・Excellent safe operating area ・Fast switching speed APPLICATIONS ・High frequency power amplifier ・Audio power amplifiers ・Switching regulators ・DC-DC converters PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS 2SA1072 VCBO Collector-base voltage -120 Open base 2SA1073 VEBO Emitter-base voltage V -160 2SA1072 Collector-emitter voltage UNIT -120 Open emitter 2SA1073 VCEO VALUE V -160 Open collector -7 V -12 A 120 W IC Collector current PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ TC=25℃ JMnic Product Specification 2SA1072 2SA1073 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO PARAMETER Collector-emitter breakdown voltage CONDITIONS 2SA1072 Collector-base breakdown voltage TYP. MAX UNIT -120 IC=-1mA ;RBE=∞ V -160 2SA1073 V(BR)CBO MIN 2SA1072 -120 IC=-50μA ;IE=0 2SA1073 V -160 Emitter-base breakdown voltage IE=-50μA ;IC=0 Collector-emitter saturation voltage IC=-5A ;IB=-0.5A -0.9 -1.8 V VBE Base-emitter on voltage IC=-5A ; VCE=-5V -1.25 -1.7 V ICBO Collector cut-off current -50 μA -1 mA -50 μA V(BR)EBO VCEsat ICEO Collector cut-off current 2SA1072 -7 V VCB=-120V; IE=0 2SA1073 VCB=-160V; IE=0 2SA1072 VCE=-120V; RBE=∞ 2SA1073 VCE=-160V; RBE=∞ IEBO Emitter cut-off current VEB=-7V; IC=0 hFE-1 DC current gain IC=-1A ; VCE=-5V 60 hFE-2 DC current gain IC=-7A ; VCE=-5V 40 COB Output capacitance IE=0 ; VCB=-10V;f=1MHz 300 pF fT Transition frequency IC=-1A ; VCE=-10V;f=10MHz 60 MHz 0.15 μs 0.50 μs 0.11 μs 200 Switching times tr tstg tf Rise time Storage time IC=-7.5A IB1=-IB2=-0.75A;RL=4Ω Fall time 2 JMnic Product Specification 2SA1072 2SA1073 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3