ISC 2SC3461

Inchange Semiconductor
Product Specification
2SC3461
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3PN package
・High breakdown voltage and high reliability.
・Fast switching speed
・Wide ASO(Safe Operating Area)
APPLICATIONS
・800V/8A switching regulator applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1100
V
VCEO
Collector-emitter voltage
Open base
800
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current
8
A
ICM
Collector current-peak
25
A
IB
Base current
4
A
PC
Collector power dissipation
140
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SC3461
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=5mA ;RBE=∞
800
V
V(BR)CBO
Collector-base breakdown voltage
IC=1mA ;IE=0
1100
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA ;IC=0
7
V
VCEsat
Collector-emitter saturation voltage
IC=4A ;IB=0.8A
2.0
V
VBEsat
Base-emitter saturation voltage
IC=4A; IB=0.8A
1.5
V
ICBO
Collector cut-off current
VCB=800V; IE=0
10
μA
IEBO
Emitter cut-off current
VEB=5V; IC=0
10
μA
hFE-1
DC current gain
IC=0.6A ; VCE=5V
10
hFE-2
DC current gain
IC=3A ; VCE=5V
8
Cob
Output capacitance
IE=0 ; VCB=10V;f=1MHz
155
pF
fT
Transition frequency
IC=0.6A ; VCE=10V
15
MHz
40
Switching times
ton
Turn-on time
tstg
Storage time
tf
‹
IC=6A;RL=66.7Ω
IB1=1.2A; IB2=-2.4A
VCC=400V
Fall time
hFE-1 Classifications
K
L
M
10-20
15-30
20-40
2
0.5
μs
3.0
μs
0.3
μs
Inchange Semiconductor
Product Specification
2SC3461
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
Inchange Semiconductor
Product Specification
2SC3461
Silicon NPN Power Transistors
4