Inchange Semiconductor Product Specification 2SC4804 Silicon NPN Power Transistors DESCRIPTION ・With ITO-220 package ・High breakdown voltage APPLICATIONS ・Switching regulator and high voltage switching applications ・High speed DC-DC converter applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (ITO-220) and symbol R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO PARAMETER CONDITIONS VALUE UNIT Collector-base voltage Open emitter 900 V Collector-emitter voltage Open base 600 V Emitter-base voltage Open collector 7 V IC Collector current 3 A ICM Collector current-Peak 5 A IB Base current 1 A PT Total power dissipation 30 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC4804 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0 600 V V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 900 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 7 V VCEsat Collector-emitter saturation voltage IC=0.8A; IB=0.16A 0.6 V VBEsat Base-emitter saturation voltage IC=0.8A; IB=0.16A 1.2 V Collector cut-off current VCB=800V; IE=0 0.1 mA TOR mA ICBO IEBO hFE CONDITIONS MIN 体 U 导 D 半 N O C 固电 I EM S E G N A INCH TYP. Emitter cut-off current VEB=7V; IC=0 DC current gain IC=0.8A ; VCE=5V 2 10 MAX 0.1 UNIT Inchange Semiconductor Product Specification 2SC4804 Silicon NPN Power Transistors PACKAGE OUTLINE R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm) 3