Inchange Semiconductor Product Specification 2SC3746 Silicon NPN Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SA1469 ・Low saturation voltage ・Excellent current dependence of hFE ・Short switching time APPLICATIONS ・Various inductance of lamp drivers for electronic equipment ・Inverters ,converters ・Switching regulator ,driver PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter 体 导 半 固电 R O T UC Fig.1 simplified outline (TO-220F) and symbol EM S E NG Absolute maximum ratings (Ta=25℃) D N O IC VCEO A H C IN Collector-emitter voltage Open base 60 V VEBO Emitter-base voltage Open collector 5 V SYMBOL VCBO PARAMETER CONDITIONS VALUE UNIT Collector-base voltage Open emitter 80 V IC Collector current 5 A ICM Collector current-peak 7 A PC Collector dissipation Ta=25℃ 2 TC=25℃ 20 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SC3746 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=1mA ;RBE=∞ 60 V V(BR)CBO Collector-base breakdown voltage IC=10mA ;IE=0 80 V V(BR)EBO Emitter-base breakdown voltage IE=10mA ;IC=0 5 V Collector-emitter saturation voltage IC=2.5A;IB=0.125A 0.4 V ICBO Collector cut-off current VCB=40V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=4V; IC=0 0.1 mA hFE DC current gain IC=1A ; VCE=2V Transition frequency IC=1A ; VCE=5V VCEsat fT 体 导 半 Switching times ton ts 固电 tf CONDITIONS EM S E NG Turn-on time A H C IN Storage time Fall time Q R S 70-140 100-200 140-280 2 TYP. 70 MAX UNIT 280 100 R O T UC MHz 0.1 μs 0.5 μs 0.1 μs D N O IC IC=2.0A; IB1=-IB2=0.1A VCC=20V ,RL=10Ω hFE Classifications MIN Inchange Semiconductor Product Specification 2SC3746 Silicon NPN Power Transistors PACKAGE OUTLINE 体 导 半 固电 EM S E NG A H C IN D N O IC Fig.2 Outline dimensions 3 R O T UC Inchange Semiconductor Product Specification 2SC3746 Silicon NPN Power Transistors 体 导 半 固电 EM S E NG A H C IN 4 D N O IC R O T UC