ISC 2SC3746

Inchange Semiconductor
Product Specification
2SC3746
Silicon NPN Power Transistors
DESCRIPTION
・With TO-220F package
・Complement to type 2SA1469
・Low saturation voltage
・Excellent current dependence of hFE
・Short switching time
APPLICATIONS
・Various inductance of lamp drivers for
electronic equipment
・Inverters ,converters
・Switching regulator ,driver
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
体
导
半
固电
R
O
T
UC
Fig.1 simplified outline (TO-220F) and symbol
EM
S
E
NG
Absolute maximum ratings (Ta=25℃)
D
N
O
IC
VCEO
A
H
C
IN
Collector-emitter voltage
Open base
60
V
VEBO
Emitter-base voltage
Open collector
5
V
SYMBOL
VCBO
PARAMETER
CONDITIONS
VALUE
UNIT
Collector-base voltage
Open emitter
80
V
IC
Collector current
5
A
ICM
Collector current-peak
7
A
PC
Collector dissipation
Ta=25℃
2
TC=25℃
20
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
Inchange Semiconductor
Product Specification
2SC3746
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=1mA ;RBE=∞
60
V
V(BR)CBO
Collector-base breakdown voltage
IC=10mA ;IE=0
80
V
V(BR)EBO
Emitter-base breakdown voltage
IE=10mA ;IC=0
5
V
Collector-emitter saturation voltage
IC=2.5A;IB=0.125A
0.4
V
ICBO
Collector cut-off current
VCB=40V; IE=0
0.1
mA
IEBO
Emitter cut-off current
VEB=4V; IC=0
0.1
mA
hFE
DC current gain
IC=1A ; VCE=2V
Transition frequency
IC=1A ; VCE=5V
VCEsat
fT
体
导
半
Switching times
ton
ts
固电
tf
‹
CONDITIONS
EM
S
E
NG
Turn-on time
A
H
C
IN
Storage time
Fall time
Q
R
S
70-140
100-200
140-280
2
TYP.
70
MAX
UNIT
280
100
R
O
T
UC
MHz
0.1
μs
0.5
μs
0.1
μs
D
N
O
IC
IC=2.0A; IB1=-IB2=0.1A
VCC=20V ,RL=10Ω
hFE Classifications
MIN
Inchange Semiconductor
Product Specification
2SC3746
Silicon NPN Power Transistors
PACKAGE OUTLINE
体
导
半
固电
EM
S
E
NG
A
H
C
IN
D
N
O
IC
Fig.2 Outline dimensions
3
R
O
T
UC
Inchange Semiconductor
Product Specification
2SC3746
Silicon NPN Power Transistors
体
导
半
固电
EM
S
E
NG
A
H
C
IN
4
D
N
O
IC
R
O
T
UC