ISC 2SA1471

Inchange Semiconductor
Product Specification
2SA1471
Silicon PNP Power Transistors
·
DESCRIPTION
·With TO-220Fpackage
·Low saturation voltage.
·Complement to type 2SC3748
·Fast switching speed.
APPLICATIONS
·Car-use inductance drivers, lamp drivers.
·Inverters drivers, converters
·Power amplifications
·Switching regulators,drivers
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-80
V
VCEO
Collector-emitter voltage
Open base
-60
V
VEBO
Emitter-base voltage
Open collector
-5
V
IC
Collector current
-10
A
ICM
Collector current-peak
-12
A
PC
Collector power dissipation
Ta=25℃
2
TC=25℃
30
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
Inchange Semiconductor
Product Specification
2SA1471
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CBO
Collector-base breakdown voltage
IC=-1mA; IE=0
-80
V
V(BR)CEO
Collector-emitter breakdown voltage
IC=-1mA; RBE=∞
-60
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-1mA; IC=0
-5
V
Collector-emitter saturation voltage
IC=-5A; IB=-0.25A
-0.4
V
ICBO
Collector cut-off current
VCB=-40V ;IE=0
-100
μA
IEBO
Emitter cut-off current
VEB=-4V; IC=0
-100
μA
hFE
DC current gain
IC=-1A ; VCE=-2V
Transition frequency
IC=-1A ; VCE=-5V
VCEsat
fT
70
280
100
MHz
0.1
μs
0.5
μs
0.1
μs
Switching times
ton
Turn-on time
tstg
Storage time
tf
VCC=20V; IC=5A
IB1=-IB2=-0.25A
RL=4Ω
Fall time
2
Inchange Semiconductor
Product Specification
2SA1471
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
Inchange Semiconductor
Product Specification
2SA1471
Silicon PNP Power Transistors
4