Inchange Semiconductor Product Specification 2SA1471 Silicon PNP Power Transistors · DESCRIPTION ·With TO-220Fpackage ·Low saturation voltage. ·Complement to type 2SC3748 ·Fast switching speed. APPLICATIONS ·Car-use inductance drivers, lamp drivers. ·Inverters drivers, converters ·Power amplifications ·Switching regulators,drivers PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -80 V VCEO Collector-emitter voltage Open base -60 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -10 A ICM Collector current-peak -12 A PC Collector power dissipation Ta=25℃ 2 TC=25℃ 30 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SA1471 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-base breakdown voltage IC=-1mA; IE=0 -80 V V(BR)CEO Collector-emitter breakdown voltage IC=-1mA; RBE=∞ -60 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA; IC=0 -5 V Collector-emitter saturation voltage IC=-5A; IB=-0.25A -0.4 V ICBO Collector cut-off current VCB=-40V ;IE=0 -100 μA IEBO Emitter cut-off current VEB=-4V; IC=0 -100 μA hFE DC current gain IC=-1A ; VCE=-2V Transition frequency IC=-1A ; VCE=-5V VCEsat fT 70 280 100 MHz 0.1 μs 0.5 μs 0.1 μs Switching times ton Turn-on time tstg Storage time tf VCC=20V; IC=5A IB1=-IB2=-0.25A RL=4Ω Fall time 2 Inchange Semiconductor Product Specification 2SA1471 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification 2SA1471 Silicon PNP Power Transistors 4