Inchange Semiconductor Product Specification 2SC4923 Silicon NPN Power Transistors DESCRIPTION ·With TO-3PML package ·High speed ·High reliability ·High breakdown voltage APPLICATIONS ·High-definition CRT display horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 8 A ICP Collector current-peak 25 A PC Collector power dissipation 3 W TC=25℃ 70 Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SC4923 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) PARAMETER CONDITIONS MIN TYP. MAX Collector-emitter sustaining voltage IC=100mA ;IB=0 ICBO Collector cut-off current VCE=800V; IE=0 10 μA ICES Collector cut-off current VEB=1500V; RBE=0 1.0 mA IEBO Emitter cut-off current VCE=4V; IC=0 1.0 mA hFE-1 DC current gain IC=1A ; VCE=5V 8 hFE-2 DC current gain IC=6A ; VCE=5V 4 VCE(sat) Collector-emitter saturation voltage IC=6A ; IB=1.5A 5 V VBE(sat) Base-emitter saturation voltage IC=6A ; IB=1.5A 1.5 V Storage time IC=6A; IB1=1.2A;IB2=-2.4A 3 μs Fall time IC=6A; IB1=1.2A;IB2=-2.4A 0.2 μs tstg tf 2 800 UNIT V 8 0.1 Inchange Semiconductor Product Specification 2SC4923 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3 Inchange Semiconductor Product Specification 2SC4923 Silicon NPN Power Transistors 4