Inchange Semiconductor Product Specification 2SD1677 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・High breakdown voltage ・High reliability ・Fast speed APPLICATIONS ・For TV horizontal output applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 6 V 5 A IC PC Collector current Ta=25℃ 2.5 TC=25℃ 100 Collector power dissipation W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SD1677 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0 V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 VCEsat Collector-emitter saturation voltage IC=4.5A ;IB=2A 5.0 V VBEsat Base-emitter saturation voltage IC=4.5A ;IB=2A 1.5 V ICBO Collector cut-off current VCB=800V; IE=0 10 μA IEBO Emitter cut-off current VEB=5V; IC=0 10 μA hFE DC current gain IC=0.5A ; VCE=5V 2 MIN TYP. MAX UNIT 800 V 6 V 8 Inchange Semiconductor Product Specification 2SD1677 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3