Inchange Semiconductor Product Specification 2SC4509 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PML package ・High voltage ,high speed switching ・Low collector saturation voltage APPLICATIONS ・Switching regulators ・DC-DC convertors ・Solid state relay ・General purpose power amplifiers PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH Emitter Absolute maximum ratings(Tc=25℃) SYMBOL VCBO VCEO VEBO PARAMETER CONDITIONS VALUE UNIT Collector-base voltage Open emitter 500 V Collector-emitter voltage Open base 400 V Emitter-base voltage Open collector 10 V IC Collector current 10 A IB Base current 3 A PC Collector power dissipation 80 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ MAX UNIT 1.56 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction case Inchange Semiconductor Product Specification 2SC4509 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-base breakdown voltage IC=1mA; IE=0 500 V VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A; IB=0 400 V V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 10 V VCEsat Collector-emitter saturation voltage IC=4A; IB=0.8A 0.8 V VBEsat Base-emitter saturation voltage IC=4A; IB=0.8A 1.2 V ICBO Collector cut-off current VCB=450V; IE=0 100 μA IEBO Emitter cut-off current VEB=10V; IC=0 100 μA hFE R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH DC current gain IC=1A ; VCE=5V 25 65 Switching times ton tstg tf Turn-on time Storage time IC=5A;RL=30Ω IB1=0.5A; IB2=-1A Pw = 20μs; Duty≤2% Fall time 2 1.0 μs 2.5 μs 0.5 μs Inchange Semiconductor Product Specification 2SC4509 Silicon NPN Power Transistors PACKAGE OUTLINE R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification 2SC4509 Silicon NPN Power Transistors R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH 4