ISC 2SC1102

Inchange Semiconductor
Product Specification
2SC1102
Silicon NPN Power Transistors
DESCRIPTION
·With TO-66 package
·High voltage
·High transition frequency
APPLICATIONS
·For color TV video output applications
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
300
V
VCEO
Collector-emitter voltage
Open base
300
V
VEBO
Emitter-base voltage
Open collector
5
V
50
mA
11
W
IC
Collector current
PT
Total power dissipation
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SC1102
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.1mA ; IB=0
V(BR)EBO
Emitter-base breakdown voltage
IE=1μA; IC=0
VCEsat
Collector-emitter saturation voltage
IC=20mA; IB=2mA
1.0
V
VBEsat
Base-emitter saturation voltage
IC=20mA; IB=2mA
1.5
V
ICEO
Collector cut-off current
VCE=200V; IB=0
1
μA
IEBO
Emitter cut-off current
VEB=5V; IC=0
1
μA
hFE
DC current gain
IC=10mA ; VCE=10V
40
Transition frequency
IC=10mA ; VCE=20V
60
fT
CONDITIONS
2
MIN
TYP.
MAX
UNIT
300
V
5
V
200
MHz
Inchange Semiconductor
Product Specification
2SC1102
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3