Inchange Semiconductor Product Specification 2SC1102 Silicon NPN Power Transistors DESCRIPTION ·With TO-66 package ·High voltage ·High transition frequency APPLICATIONS ·For color TV video output applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 300 V VCEO Collector-emitter voltage Open base 300 V VEBO Emitter-base voltage Open collector 5 V 50 mA 11 W IC Collector current PT Total power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC1102 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=0.1mA ; IB=0 V(BR)EBO Emitter-base breakdown voltage IE=1μA; IC=0 VCEsat Collector-emitter saturation voltage IC=20mA; IB=2mA 1.0 V VBEsat Base-emitter saturation voltage IC=20mA; IB=2mA 1.5 V ICEO Collector cut-off current VCE=200V; IB=0 1 μA IEBO Emitter cut-off current VEB=5V; IC=0 1 μA hFE DC current gain IC=10mA ; VCE=10V 40 Transition frequency IC=10mA ; VCE=20V 60 fT CONDITIONS 2 MIN TYP. MAX UNIT 300 V 5 V 200 MHz Inchange Semiconductor Product Specification 2SC1102 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3