Inchange Semiconductor Product Specification 2SC1348 Silicon NPN Power Transistors · DESCRIPTION ·With TO-3 package ·High power dissipation APPLICATIONS ·For TV horizontal deflection output applications PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1000 V VCEO Collector-emitter voltage Open base 500 V VEBO Emitter-base voltage Open collector 5 V 4 A 125 W IC Collector current PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC1348 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0 V(BR)EBO Emitter-base breakdown votage IE=1mA; IC=0 VCEsat Collector-emitter saturation voltage IC=3 A;IB=0.6 A 5.0 V VBEsat Base-emitter saturation voltage IC=3 A;IB=0.6 A 1.5 V ICBO Collector cut-off current VCB=1000V;IE=0 0.1 mA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 mA hFE DC current gain IC=2A ; VCE=3V Transition frequency IC=0.5A ; VCE=10V fT CONDITIONS 2 MIN TYP. MAX UNIT 500 V 5 V 4.5 19 5 MHz Inchange Semiconductor Product Specification 2SC1348 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3