Inchange Semiconductor Product Specification 2SC1004 Silicon NPN Power Transistors · DESCRIPTION ·With TO-3 package ·High breakdown voltage APPLICATIONS ·For use in horizontal deflection output stages for color TV receives. PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1100 V VCEO Collector-emitter voltage Open base 700 V VEBO Emitter-base voltage Open collector 5 V 0.5 A 50 W IC Collector current PT Total power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC1004 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A; IB=0 700 V V(BR)EBO Emitter-base breakdown votage IE=1mA; IC=0 5 V VCEsat Collector-emitter saturation voltage IC=150m A;IB=30mA 5.0 V VBEsat Base-emitter saturation voltage IC=150m A;IB=30mA 1.5 V ICBO Collector cut-off current VCB=800V;IE=0 10 μA IEBO Emitter cut-off current VEB=4V;IC=0 10 μA hFE DC current gain IC=150m A ; VCE=15V 30 Transition frequency IC=150m A ; VCE=15V 2.0 fT CONDITIONS 2 MIN TYP. MAX UNIT 160 MHz Inchange Semiconductor Product Specification 2SC1004 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3