Inchange Semiconductor Product Specification 2SD1430 Silicon NPN Power Transistors DESCRIPTION ·With TO-3P(H)IS package ·High voltage ,high speed ·Low collector saturation voltage APPLICATIONS ·Designed for use in color TV horizontal output applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 600 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 3.5 A IE Emitter current -3.5 A PD Total power dissipation 80 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SD1430 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER TYP. MAX UNIT VCE(sat) Collector-emitter saturation voltage IC=3A; IB=0.8A 4.0 8.0 V VBE(sat) Base-emitter saturation voltage IC=3A; IB=0.8A 1.5 V ICBO Collector cut-off current VCB=500V; IE=0 10 μA IEBO Emitter cut-off current VEB=5V; IC=0 1 mA hFE DC current gain IC=0.5A ; VCE=5V fT Transition freuqency IC=0.1A ; VCE=10V 3 MHz COB Output capacitance IE=0 ; VCB=10V;f=1.0MHz 95 pF Fall time IC=3A;IB1=0.8A tf CONDITIONS 2 MIN 8 20 1.0 μs Inchange Semiconductor Product Specification 2SD1430 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3