Inchange Semiconductor Product Specification 2SD198 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High breakdown voltage APPLICATIONS ·voltage regulator ·Inverters ·Switching mode power supply PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 300 V VCEO Collector-emitter voltage Open base 300 V VEBO Emitter-base voltage Open collector 6 V 1 A 25 W IC Collector current PC Collector power dissipation Tj Junction temperature 165 ℃ Tstg Storage temperature -55~200 ℃ TC=75℃ Inchange Semiconductor Product Specification 2SD198 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0 V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 VCEsat Collector-emitter saturation voltage IC=1.0A; IB=0.1A 1.0 V VBEsat Base-emitter saturation voltage IC=1.0A; IB=0.1A 1.5 V ICBO Collector cut-off current VCB=300V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=6V; IC=0 0.1 mA hFE DC current gain IC=0.1A ; VCE=5V Transition frequency IC=0.5A ; VCE=10V fT CONDITIONS 2 MIN TYP. MAX UNIT 300 V 6 V 30 300 25 MHz Inchange Semiconductor Product Specification 2SD198 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3