Inchange Semiconductor Product Specification 2SD2374 2SD2374A Silicon NPN Power Transistors DESCRIPTION ·With TO-220F package ·Complement to type 2SB1548/1548A ·Low collector saturation voltage ·High forward current transfer ratio hFE which has satisfactory linearity APPLICATIONS ·For power amplifications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS 2SD2374 VCBO Collector-base voltage 60 Open base 2SD2374A VEBO Emitter-base voltage V 80 2SD2374 Collector-emitter voltage UNIT 60 Open emitter 2SD2374A VCEO VALUE V 80 Open collector 6 V IC Collector current 3 A ICM Collector current-peak 5 A PC Collector dissipation Ta=25℃ 2 TC=25℃ 25 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SD2374 2SD2374A Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO VCEsat PARAMETER Collector-emitter voltage CONDITIONS 2SD2374 MIN TYP. MAX UNIT 60 IC=30mA ; IB=0 2SD2374A V 80 Collector-emitter saturation voltage IC=3A ;IB=0.375A 1.2 V VBE Base-emitter voltage IC=3A ; VCE=4V 1.8 V ICBO Collector cut-off current 200 μA 300 μA 1 mA ICEO Collector cut-off current 2SD2374 VCB=60V; IE=0 2SD2374A VCB=80V; IE=0 2SD2374 VCE=30V; IB=0 2SD2374A VCE=60V; IB=0 IEBO Emitter cut-off current VEB=6V; IC=0 hFE-1 DC current gain IC=1A ; VCE=4V 70 hFE-2 DC current gain IC=3A ; VCE=4V 10 Transition frequency IC=0.5A ; VCE=10V fT 250 30 MHz 0.5 μs 2.5 μs 0.4 μs Switching times ton Turn-on time ts Storage time tf Fall time IC=1.0A; IB1=-IB2=0.1A VCC=50V hFE-1 Classifications Q P 70-150 120-250 2 Inchange Semiconductor Product Specification 2SD2374 2SD2374A Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification 2SD2374 2SD2374A Silicon NPN Power Transistors 4