Inchange Semiconductor Product Specification 2SD1275 2SD1275A Silicon NPN Power Transistors DESCRIPTION ・With TO-220Fa package ・Complement to type 2SB949/949A ・High DC current gain ・High-speed switching APPLICATIONS ・For power amplification PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol 体 导 半 Absolute maximum ratings (Ta=25℃) 固电 SYMBOL VCBO VCEO VEBO PARAMETER EM S E G N A H 2SD1275 Collector-base voltage INC Collector-emitter voltage D N O IC R O T UC CONDITIONS VALUE 60 Open emitter 2SD1275A 2SD1275 V 80 60 Open base 2SD1275A Emitter-base voltage UNIT V 80 Open collector 5 V IC Collector current 2 A ICM Collector current-Peak 4 A PC Collector power dissipation TC=25℃ 35 Ta=25℃ 2 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SD1275 2SD1275A Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO PARAMETER Collector-emitter breakdown voltage CONDITIONS 2SD1275 TYP. MAX UNIT 60 IC=30mA , IB=0 V 80 2SD1275A VCEsat MIN Collector-emitter saturation voltage IC=2A; IB=8mA 2.5 V VBE Base-emitter voltage VCE=4V; IC=2A 2.8 V ICBO Collector cut-off current 1.0 mA 2.0 mA 2SD1275 VCB=60V; IE=0 2SD1275A VCB=80V; IE=0 Collector 2SD1275 VCE=30V; IB=0 cut-off current 2SD1275A VCE=40V; IB=0 ICEO IEBO hFE-1 hFE-2 fT Emitter cut-off current 体 导 半 固电 DC current gain DC current gain IN ton Turn-on time ts Storage time tf Fall time IC=1A ; VCE=4V IC=2A ; VCE=4V IC=0.5A; VCE=10V;f=1MHz IC=2A ;IB1=8mA IB2=-8mA;VCC=50V hFE-2 Classifications Q R 2000-5000 4000-10000 2 TOR C U D ON C I M E SE G N A CH Transition frequency Switching times VEB=5V; IC=0 1000 2000 2.0 mA 10000 20 MHz 0.5 μs 4.0 μs 1.0 μs Inchange Semiconductor Product Specification 2SD1275 2SD1275A Silicon NPN Power Transistors PACKAGE OUTLINE 体 导 半 固电 EM S E NG A H C IN R O T UC D N O IC Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3