Inchange Semiconductor Product Specification 2SD1271 2SD1271A Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Complement to type 2SB946/946A ・Low collector saturation voltage ・Good linearity of hFE ・Large collector current IC APPLICATIONS ・For power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol ABSOLUTE MAXIMUM RATINGS AT Ta=25℃ SYMBOL VCBO PARAMETER Collector-base voltage CONDITIONS 2SD1271 Collector-emitter voltage 2SD1271 Emitter-base voltage IC V 150 80 Open base V 100 2SD1271A VEBO UNIT 130 Open emitter 2SD1271A VCEO VALUE Open collector 7 V Collector current (DC) 7 A ICM Collector current-peak 15 A PC Collector power dissipation TC=25℃ 40 Ta=25℃ 2 w Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SD1271 2SD1271A Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO PARAMETER CONDITIONS 2SD1271 Collector-emitter voltage MIN TYP. MAX UNIT 80 IC=10mA , IB=0 V 100 2SD1271A VCEsat Collector-emitter saturation voltage IC=5A ;IB=0.25A 0.5 V VBEsat Base-emitter saturation voltage IC=5A ;IB=0.25A 1.5 V ICBO Collector cut-off current VCB=100V; IE=0 10 μA IEBO Emitter cut-off current VEB=5V; IC=0 50 μA hFE-1 DC current gain IC=0.1A ; VCE=2V 45 hFE-2 DC current gain IC=3A ; VCE=2V 60 Transition frequency IC=0.5A ; VCE=10V fT 260 30 MHz 0.5 μs 1.5 μs 0.1 μs Switching times ton Turn-on time ts Storage time tf Fall time IC=3A ;IB1=-IB2=0.3A VCC=50V hFE-2 Classifications R Q P 60-120 90-180 130-260 2 Inchange Semiconductor Product Specification 2SD1271 2SD1271A Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3 Inchange Semiconductor Product Specification 2SD1271 2SD1271A Silicon NPN Power Transistors 4 Inchange Semiconductor Product Specification 2SD1271 2SD1271A Silicon NPN Power Transistors 5