INCHANGE Semiconductor Product Specification 2SD1545 Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage: VCBO= 1500V (Min) ·High Switching Speed ·Low Saturation Voltage APPLICATIONS ·Color TV horizontal output applications ·Switching regulator output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 5 A IB Base Current- Continuous 2.5 A PC Collector Power Dissipation @ TC=25℃ 50 W TJ Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature Range INCHANGE Semiconductor Product Specification 2SD1545 Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCE(sat) Collector-Emitter Saturation Voltage VBE(sat) MAX UNIT IC= 4.0A; IB= 0.8A 5.0 V Base-Emitter Saturation Voltage IC= 4.0A; IB= 0.8A 1.5 V ICBO Collector Cutoff Current VCB= 500V ; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 5V ; IC= 0 1.0 mA hFE DC Current Gain IC= 1A ; VCE= 5V Current-Gain—Bandwidth Product IC= 0.1A ; VCE= 10V Output Capacitance Fall Time fT COB tf CONDITIONS MIN TYP. 8 3 MHz IE= 0 ; VCB= 10V;ftest= 1.0MHz 165 pF ICP= 4A , IB1(end)= 0.8A 0.5 2 1.0 μs INCHANGE Semiconductor Product Specification 2SD1545 Silicon NPN Power Transistor 3