ISC 2SD1545

INCHANGE Semiconductor
Product Specification
2SD1545
Silicon NPN Power Transistor
DESCRIPTION
·High Breakdown Voltage: VCBO= 1500V (Min)
·High Switching Speed
·Low Saturation Voltage
APPLICATIONS
·Color TV horizontal output applications
·Switching regulator output applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1500
V
VCEO
Collector-Emitter Voltage
600
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current- Continuous
5
A
IB
Base Current- Continuous
2.5
A
PC
Collector Power Dissipation
@ TC=25℃
50
W
TJ
Junction Temperature
150
℃
-55~150
℃
Tstg
Storage Temperature Range
INCHANGE Semiconductor
Product Specification
2SD1545
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCE(sat)
Collector-Emitter Saturation Voltage
VBE(sat)
MAX
UNIT
IC= 4.0A; IB= 0.8A
5.0
V
Base-Emitter Saturation Voltage
IC= 4.0A; IB= 0.8A
1.5
V
ICBO
Collector Cutoff Current
VCB= 500V ; IE= 0
10
μA
IEBO
Emitter Cutoff Current
VEB= 5V ; IC= 0
1.0
mA
hFE
DC Current Gain
IC= 1A ; VCE= 5V
Current-Gain—Bandwidth Product
IC= 0.1A ; VCE= 10V
Output Capacitance
Fall Time
fT
COB
tf
CONDITIONS
MIN
TYP.
8
3
MHz
IE= 0 ; VCB= 10V;ftest= 1.0MHz
165
pF
ICP= 4A , IB1(end)= 0.8A
0.5
2
1.0
μs
INCHANGE Semiconductor
Product Specification
2SD1545
Silicon NPN Power Transistor
3