isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1569 DESCRIPTION ·High Collector-Emitter Breakdown Voltage:V(BR)CEO= 300V(Min) ·DC Current Gain: hFE= 40-170 @IC= 50mA, VCE= 10V ·High Current-Gain Bandwidth Product APPLICATIONS ·Designed for color TV chroma output applications. n c . i m e ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL s c s .i PARAMETER ww VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w VALUE UNIT 300 V 300 V 5 V IC Collector Current-Continuous 150 mA IE Emitter Current-Continuous -150 mA Collector Power Dissipation @ Ta=25℃ 1.5 W PC TJ Tstg Collector Power Dissipation @ TC=25℃ 12.5 Junction Temperature 150 ℃ -55~150 ℃ Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1569 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 100mA; IB= 20mA 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 100mA; IB= 20mA 1.2 V ICBO Collector Cutoff Current VCB= 100V ; IE= 0 1.0 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 1.0 μA hFE DC Current Gain IC= 50mA ; VCE= 10V COB Output Capacitance fT CONDITIONS w w isc Website：www.iscsemi.cn 2 MAX 40 UNIT V 40 IE= 0; VCB= 50V; ftest= 1MHz IC= 30mA; VCE= 10V TYP. 300 n c . i m e s c s i . w Current-Gain—Bandwidth Product MIN 170 5 pF MHz