isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistors BDT62/A/B/C DESCRIPTION ·DC Current Gain -hFE = 1000(Min)@ IC= -3A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = -60V(Min)- BDT62; -80V(Min)- BDT62A; -100V(Min)- BDT62B; -120V(Min)- BDT62C ·Complement to Type BDT63/A/B/C APPLICATIONS ·Designed for use in audio amplifier output stages , general purpose amplifier and high speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO PARAMETER Collector-Base Voltage VALUE BDT62 -60 BDT62A -80 n c . i m e V s c s i . w BDT62B -100 BDT62C -120 w w Collector-Emitter Voltage UNIT BDT62 -60 BDT62A -80 BDT62B -100 BDT62C -120 V Emitter-Base Voltage -5 V IC Collector Current-Continuous -10 A ICM Collector Current-Peak -15 A IB Base Current -0.25 A PC Collector Power Dissipation TC=25℃ 90 W Tj Junction Temperature 150 ℃ -65~150 ℃ B Tstg Storage Ttemperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case Rth j-c Thermal Resistance,Junction to Ambient isc Website：www.iscsemi.cn MAX UNIT 1.39 ℃/W 70 ℃/W isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistors BDT62/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDT62 V(BR)CEO Collector-Emitter Breakdown Voltage MIN TYP. MAX UNIT -60 BDT62A -80 IC= -30mA; IB= 0 V BDT62B -100 BDT62C -120 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -3A; IB= -12mA -2.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -8A; IB= -80mA -2.5 V Base-Emitter On Voltage IC= -3A; VCE= -3V -2.5 V VCB= -60V; IE= 0 VCB= -30V; IE= 0; TJ=150℃ -0.2 -2.0 VCB= -80V; IE= 0 VCB= -40V; IE= 0; TJ=150℃ -0.2 -2.0 VCB= -100V; IE= 0 VCB= -50V; IE= 0; TJ=150℃ -0.2 -2.0 VCB= -120V; IE= 0 VCB= -60V; IE= 0; TJ=150℃ -0.2 -2.0 VCE= -30V; IB= 0 -0.5 BDT62A VCE= -40V; IB= 0 -0.5 BDT62B VCE= -50V; IB= 0 -0.5 BDT62C VCE= -60V; IB= 0 -0.5 -5 mA -2.0 V VBE(on) B BDT62 B ICBO ICEO Collector Cutoff Current ww w Collector Cutoff Current BDT62B BDT62C BDT62 n c . i m e s c s .i BDT62A B B mA mA B B IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 DC Current Gain IC= -3A; VCE= -3V hFE-2 DC Current Gain IC= -10A; VCE= -3V VECF C-E Diode Forward Voltage IE= -3A 1000 200 Switching Times ton Turn-On Time toff Turn-Off Time 0.5 μs 2.5 μs IC= -3A; IB1= -IB2= -12mA isc Website：www.iscsemi.cn