isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BD719 DESCRIPTION ·DC Current Gain: hFE= 40@ IC= 0.5A ·Collector-Emitter Breakdown Voltage : V(BR)CEO= 60V(Min) ·Complement to type BD720 APPLICATIONS ·Designed for use in audio output and general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak 7 A IB Base Current-Continuous 1 A PC Collector Power Dissipation @ TC=25℃ 30 W TJ Junction Temperature 150 ℃ -65~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 3.5 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 100 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BD719 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A 1.0 V VBE(on) Base-Emitter On Voltage IC= 2A; VCE= 4V 1.4 V VCB= 60V; IE= 0 50 μA VCB= 30V; IE= 0; TC= 150℃ 1 mA ICBO CONDITIONS MIN TYP. MAX 60 UNIT V B Collector Cutoff Current ICEO Collector Cutoff Current VCE= 30V; IB= 0 0.1 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 0.2 mA hFE-1 DC Current Gain IC= 0.5A; VCE= 4V 40 hFE-2 DC Current Gain IC= 2A; VCE= 4V 20 Current-Gain—Bandwidth Product IC= 0.5A; VCE= 4V 3 fT B MHz Switching Times ton Turn-On time 0.3 μs 1.5 μs IC= 1A; IB1= -IB2= 0.1A;VCC= 20V toff Turn-Off time isc Website：www.iscsemi.cn 2