isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector Current -IC= 12A ·High DC Current Gain-hFE= 1000(Min)@ IC= 5A ·Complement to Type BDX64/A/B/C APPLICATIONS ·Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO PARAMETER Collector-Base Voltage Collector-Emitter Voltage VALUE BDX65 80 BDX65A 100 BDX65B 120 BDX65C 140 BDX65 60 BDX65A 80 BDX65B 100 BDX65C 120 UNIT V V Emitter-Base Voltage 5 V IC Collector Current-Continuous 12 A ICM Collector Current-Peak 16 A IB Base Current-Continuous 0.2 A PC Collector Power Dissipation @ TC=25℃ 117 W TJ Junction Temperature 200 ℃ -65~200 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.5 ℃/W isc Website：www.iscsemi.cn BDX65/A/B/C isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor BDX65/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL VCEO(SUS) PARAMETER Collector-Emitter Sustaining Voltage CONDITIONS MIN BDX65 60 BDX65A 80 TYP. MAX IC= 100mA ;IB=0 UNIT V BDX65B 100 BDX65C 120 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 20mA 2 V VBE(on) Base-Emitter On Voltage IC= 5A ; VCE= 3V 2.5 V VECF C-E Diode Forward Voltage IF= 5A ICEO Collector Cutoff Current VCE= 1/2VCEOmax; IB= 0 0.2 mA ICBO Collector Cutoff Current VCB= VCEOmax;IE= 0 VCB= 1/2VCBOmax;IE= 0;TJ= 200℃ 0.4 3 mA IEBO Emitter Cutoff Current VEB= 5V; IC=0 5 mA hFE-1 DC Current Gain IC= 1A ; VCE= 3V hFE-2 DC Current Gain IC= 5A ; VCE= 3V hFE-3 DC Current Gain IC= 12A ; VCE= 3V 3700 COB Output Capacitance IE= 0 ; VCB= 10V; ftest= 1MHz 200 pF 1 μs 6 μs B 1.2 V 3300 1000 Switching times ton Turn-on Time IC= 5A; IB1= -IB2= 20mA toff Turn-off Time isc Website：www.iscsemi.cn 2