isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector Current -IC= -16A ·High DC Current Gain-hFE= 1000(Min)@ IC= -10A ·Complement to Type BDX67/A/B/C APPLICATIONS ·Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO PARAMETER Collector-Base Voltage Collector-Emitter Voltage VALUE BDX66 -80 BDX66A -100 BDX66B -120 BDX66C -140 BDX66 -60 BDX66A -80 BDX66B -100 BDX66C -120 UNIT V V Emitter-Base Voltage -5 V IC Collector Current-Continuous -16 A ICM Collector Current-Peak -20 A -0.25 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ 150 W TJ Junction Temperature 200 ℃ -65~200 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.17 ℃/W isc Website：www.iscsemi.cn BDX66/A/B/C isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor BDX66/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL VCEO(SUS) PARAMETER Collector-Emitter Sustaining Voltage CONDITIONS MIN BDX66 -60 BDX66A -80 TYP. MAX IC= -100mA ;IB=0 UNIT V BDX66B -100 BDX66C -120 VCE(sat) Collector-Emitter Saturation Voltage IC= -10A; IB= -40mA -2 V VBE(on) Base-Emitter On Voltage IC= -10A ; VCE= -3V -2.5 V VECF C-E Diode Forward Voltage IF= -10A ICEO Collector Cutoff Current VCE= 1/2VCEOmax; IB= 0 ICBO BDX66 VCB= -40V;IE= 0;TJ= 200℃ BDX66A VCB= -50V;IE= 0;TJ= 200℃ BDX66B VCB= -60V;IE= 0;TJ= 200℃ BDX66C VCB= -70V;IE= 0;TJ= 200℃ -2 Collector Cutoff Current V -1 mA -5 mA ICBO Collector Cutoff Current VCB= VCBOmax;IE= 0 -1 mA IEBO Emitter Cutoff Current VEB= -5V; IC=0 -5 mA hFE-1 DC Current Gain IC= -1A ; VCE= -3V hFE-2 DC Current Gain IC= -10A ; VCE= -3V hFE-3 DC Current Gain IC= -16A ; VCE= -3V 1000 COB Output Capacitance IE= 0 ; VCB= -10V; ftest= 1MHz 300 pF 1 μs 3.5 μs 2000 1000 Switching times ton Turn-on Time IC= -10A; IB1= -IB2= -40mA toff Turn-off Time isc Website：www.iscsemi.cn 2