isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector Current -IC= -8A ·High DC Current Gain-hFE= 1000(Min)@ IC= -3A ·Complement to Type BDX63/A/B/C APPLICATIONS ·Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO PARAMETER Collector-Base Voltage Collector-Emitter Voltage VALUE BDX62 -80 BDX62A -100 BDX62B -120 BDX62C -140 BDX62 -60 BDX62A -80 BDX62B -100 BDX62C -120 UNIT V V Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A ICM Collector Current-Peak -12 A -0.15 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ 90 W TJ Junction Temperature 200 ℃ -65~200 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.94 ℃/W isc Website：www.iscsemi.cn BDX62/A/B/C isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor BDX62/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL VCEO(SUS) PARAMETER Collector-Emitter Sustaining Voltage CONDITIONS MIN BDX62 -60 BDX62A -80 TYP. MAX IC= -100mA ;IB=0 UNIT V BDX62B -100 BDX62C -120 VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -12mA -2 V VBE(on) Base-Emitter On Voltage IC= -3A ; VCE= -3V -2.5 V ICEO Collector Cutoff Current VCE= 1/2VCEO; IB= 0 -0.2 mA ICBO Collector Cutoff Current VCB= VCBOmax;IE= 0 -0.2 mA -2 mA -5 mA ICBO B BDX62 VCB= -40V;IE= 0;TJ= 200℃ BDX62A VCB= -50V;IE= 0;TJ= 200℃ BDX62B VCB= -60V;IE= 0;TJ= 200℃ BDX62C VCB= -70V;IE= 0;TJ= 200℃ Collector Cutoff Current IEBO Emitter Cutoff Current VEB= -5V; IC=0 hFE-1 DC Current Gain IC= -0.5A ; VCE= -3V hFE-2 DC Current Gain IC= -3A ; VCE= -3V hFE-3 DC Current Gain IC= -8A ; VCE= -3V 750 COB Output Capacitance IE= 0 ; VCB= -10V; ftest= 1MHz 100 pF 0.5 μs 2.5 μs 1500 1000 Switching times ton Turn-on Time IC= -3A; IB1= -IB2= -12mA toff Turn-off Time isc Website：www.iscsemi.cn 2