Inchange Semiconductor Product Specification BU1506DX Silicon NPN Power Transistors DESCRIPTION ・With TO-220F package ・High voltage ・High speed switching ・Built-in damper diode. APPLICATIONS ・For use in horizontal deflection circuits of colour TV receivers. PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol 导体 半 电 固 SYMBOL VCBO VCEO VEBO M E S GE PARAMETER N A H INC Collector-base voltage Collector-emitter voltage Emitter-base voltage R O T UC D N O IC Absolute maximum ratings (Ta=25℃) CONDITIONS VALUE UNIT Open emitter 1500 V Open base 700 V Open collector 7.5 V IC Collector current 5 A ICM Collector current-peak 8 A IB Base current 3 A IBM Base current-peak 8 A PC Collector dissipation 32 W Tj Junction temperature 150 ℃ Tstg Storage temperature -40~150 ℃ TC=25℃ Inchange Semiconductor Product Specification BU1506DX Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 13.5 MAX UNIT V(BR)EBO Emitter-base breakdown voltage IE=600mA ;IC=0 7.5 VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0;L=25mH 700 VCEsat Collector-emitter saturation voltage IC=3A; IB=0.79A 5.0 V VBEsat Base-emitter saturation voltage IC=3A; IB=0.79A 1.1 V ICES Collector cut-off current VCE=rated;VBE=0 Tj=125℃ 1.0 2.0 mA IEBO Emitter cut-off current VEB=7.5V; IC=0 180 mA hFE-1 DC current gain IC=0.3A ; VCE=5V hFE-2 DC current gain VF CC 导体 半 电 固 IF=3.0A Collector output capacitance IE=0,f=1MHz;VCB=10V 12 N A H INC 2 3.8 5.5 7.5 1.6 2.0 R O T UC D N O IC M E S GE V 90 IC=3.0A ; VCE=5V Diode forward voltage V 47 V pF Inchange Semiconductor Product Specification BU1506DX Silicon NPN Power Transistors PACKAGE OUTLINE 导体 半 电 固 D N O IC R O T UC M E S GE N A H INC Fig.2 Outline dimensions 3