Inchange Semiconductor Product Specification BU2708DF Silicon NPN Power Transistors DESCRIPTION ・With TO-3PFa package ・High voltage ・High speed switching ・Built-in damper diode APPLICATIONS ・For use in horizontal deflection circuits of colour TV receivers. PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1700 V VCEO Collector-emitter voltage Open base 825 V IC Collector current (DC) 8 A ICM Collector current -peak 15 A IB Base Collector current (DC) 4 A IBM Base current -peak 6 A Ptot Total power dissipation 45 W TC=25℃ Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ Inchange Semiconductor Product Specification BU2708DF Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)EBO PARAMETER CONDITIONS MIN TYP. 7.5 13.5 MAX UNIT Emitter-base breakdown voltage IE=600mA ;IC=0 VCEsat Collector-emitter saturation voltage IC=4A ;IB=1.33 A 1.0 V VBEsat Base-emitter saturation voltage IC=4A ;IB=1.33 A 1.0 V ICES Collector cut-off current VCE=BVCES; VBE=0 Tj=125℃ 1.0 2.0 mA hFE-1 DC current gain IC=1A ; VCE=5V hFE-2 DC current gain IC=4A ; VCE=1V Diode forward voltage IF=4A VF 15 3 6 1.6 2 V 7.3 V Inchange Semiconductor Product Specification BU2708DF Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3