isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU209 DESCRIPTION ·High Reverse Voltage ·High Peak Power ·Collector Current- IC = 4A APPLICATIONS ·Designed for use in horizontal deflection circuits in color TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 1700 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak 7.5 A IB Base Current-Continuous 2.5 A IBM Base Current-Peak 4 A PC Collector Power Dissipation @TC≤95℃ 12.5 W TJ Junction Temperature 115 ℃ Tstg Storage Temperature -65~115 ℃ MAX UNIT 1.6 ℃/W B THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU209 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CES Collector-Emitter Breakdown Voltage IC= 1mA V(BR)EBO Emitter-Base Breakdown Voltage IE= 100mA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 1.3A 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 1.3A 1.5 V hFE DC Current Gain IC= 3A ; VCE= 5V COB Output Capacitance IE= 0; VCB= 10V;ftest= 1MHz Current-Gain—Bandwidth Product IC= 0.1A;VCE= 5V;ftest= 5MHz fT CONDITIONS MIN TYP. MAX UNIT 1700 V 5 V B B 2.25 125 pF 7 MHz Switching Times ts Storage Time 10 μs 0.7 μs IC= 3A; IB= 1.8A;LB= 10μH B tf Fall Time isc Website：www.iscsemi.cn 2