ISC BU705DF

isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
BU705DF
DESCRIPTION
·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 700V (Min)
·High Switching Speed
·Built-in Integrated Efficiency Diode
APPLICATIONS
·Designed for use in horizontal deflection circuits of TV
receivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector- Emitter Voltage(VBE= 0)
1500
V
VCEO
Collector-Emitter Voltage
700
V
VEBO
Emitter-Base Voltage
5
V
2.5
A
IC
Collector Current- Continuous
ICM
Collector Current-Peak
4
A
IB
Base Current- Continuous
2
A
IBM
Base Current-Peak
4
A
PC
Collector Power Dissipation
@ TC=25℃
29
W
TJ
Junction Temperature
150
℃
-65~150
℃
B
Tstg
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
4.37
℃/W
isc Website:www.iscsemi.cn
isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
BU705DF
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= 100mA ; IB= 0;L= 25mH
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 2A; IB= 0.9A
5
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 2A; IB= 0.9A
1.3
V
ICES
Collector Cutoff Current
VCE= VCESmax ; VBE= 0
VCE= VCESmax ; VBE= 0; TJ=125℃
0.15
1
mA
IEBO
Emitter Cutoff Current
VEB= 5V ; IC= 0
1
mA
hFE
DC Current Gain
IC= 2A ; VCE= 5V
VECF
C-E Diode Forward Voltage
IF= 3A
1.8
V
COB
Output Capacitance
IE= 0; VCB= 10V; ftest= 0.1MHz
65
pF
Current-Gain—Bandwidth Product
IC= 0.1A; VCE= 5V; ftest= 5MHz
7
MHz
7.5
μs
0.9
μs
fT
CONDITIONS
MIN
TYP.
MAX
700
UNIT
V
B
B
2.2
Switching Times
tstg
Storage Time
IC= 2A ;IB(end)= 0.9A; LB= 15μH
tf
Fall Time
isc Website:www.iscsemi.cn
2