isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU705DF DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 700V (Min) ·High Switching Speed ·Built-in Integrated Efficiency Diode APPLICATIONS ·Designed for use in horizontal deflection circuits of TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage(VBE= 0) 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 5 V 2.5 A IC Collector Current- Continuous ICM Collector Current-Peak 4 A IB Base Current- Continuous 2 A IBM Base Current-Peak 4 A PC Collector Power Dissipation @ TC=25℃ 29 W TJ Junction Temperature 150 ℃ -65~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 4.37 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU705DF ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ; IB= 0;L= 25mH VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.9A 5 V VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.9A 1.3 V ICES Collector Cutoff Current VCE= VCESmax ; VBE= 0 VCE= VCESmax ; VBE= 0; TJ=125℃ 0.15 1 mA IEBO Emitter Cutoff Current VEB= 5V ; IC= 0 1 mA hFE DC Current Gain IC= 2A ; VCE= 5V VECF C-E Diode Forward Voltage IF= 3A 1.8 V COB Output Capacitance IE= 0; VCB= 10V; ftest= 0.1MHz 65 pF Current-Gain—Bandwidth Product IC= 0.1A; VCE= 5V; ftest= 5MHz 7 MHz 7.5 μs 0.9 μs fT CONDITIONS MIN TYP. MAX 700 UNIT V B B 2.2 Switching Times tstg Storage Time IC= 2A ;IB(end)= 0.9A; LB= 15μH tf Fall Time isc Website：www.iscsemi.cn 2