isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU2725DF DESCRIPTION ·High Switching Speed ·High Voltage ·Built-in Ddamper Ddiode APPLICATIONS ·Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage(VBE= 0) 1700 V VEBO Emitter-Base Voltage 7.5 V IC Collector Current- Continuous 12 A ICM Collector Current-Peak 30 A IB Base Current- Continuous 12 A IBM Base Current-Peak 20 A PC Collector Power Dissipation @ TC=25℃ 45 W TJ Junction Temperature 150 ℃ -65~150 ℃ B Tstg Storage Temperature Range SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.8 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU2725DF ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX V(BR)EBO Emitter-Base Breakdown Voltage IE= 600mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 7A; IB= 1.75A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 7A; IB= 1.75A 0.95 V ICES Collector Cutoff Current VCE= 1700V ; VBE= 0 VCE= 1700V ; VBE= 0; TC=125℃ 1.0 2.0 mA IEBO Emitter Cutoff Current VEB= 7.5V ; IC= 0 110 hFE-1 DC Current Gain IC= 1A ; VCE= 5V 19 hFE-2 DC Current Gain IC= 7A ; VCE= 1V VECF C-E Diode Forward Voltage IF= 7A isc Website：www.iscsemi.cn 7.5 UNIT V B B 2 3.8 mA 7.8 2.2 V