isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD897 DESCRIPTION ·High Breakdown Voltage: VCBO= 1500V (Min) ·High Switching Speed ·Low Collector Saturation Voltage: VCE(sat)= 5.0V(Max.)@ IC= 1A ·Built-in Damper Diode APPLICATIONS ·Designed for use in color TV deflection circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 1.5 A ICM Collector Current- Peak 5.0 A IB Base Current- Continuous 0.8 A PC Collector Power Dissipation @ TC= 25℃ 50 W TJ Junction Temperature 150 ℃ -65~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 2.5 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD897 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL VEBO PARAMETER CONDITIONS MIN TYP. MAX Emitter-Base Breakdown Voltage IE= 200mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.2A 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 1A; IB= 0.2A 1.5 V ICES Collector Cutoff Current VCE= 1500V; RBE= 0 500 μA hFE DC Current Gain IC= 0.5A; VCE= 5V VECF C-E Diode Forward Voltage IF= 2A 2.5 V fT Current-Gain—Bandwidth Product IC= 0.1A; VCE= 10V tf Fall Time IC= 0.8A, IB1(end)= 0.16A isc Website：www.iscsemi.cn 6.0 UNIT V B B 2 8 3 MHz 1.0 μs