isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU931ZPFI DESCRIPTION ·High Voltage ·DARLINGTON ·Integrated High Voltage Zener APPLICATIONS ·Application in high performance electronic car ignition ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 350 V VCER Collector-Emitter Voltage (RBE=100Ω) 350 V VCES Collector-Emitter Voltage (VBE=0) 350 V VCEO Collector-Emitter Voltage 350 V VEBO Emitter-Base Voltage 5 V IC Collector Current 20 A IB Base Current 5 A PC Collector Power Dissipation @TC=25℃ 60 W Tj Junction Temperature 150 ℃ -40~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 2.08 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU931ZPFI ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT 500 500 V Clamping Voltage IC= 100mA; IB= 0 IC= 100mA; IB= 0; TJ=125℃ VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 7A; IB= 70mA 1.6 V V CE(sat)-2 Collector-Emitter Saturation Voltage IC= 8 A; IB= 100mA 1.8 V V CE(sat)-3 Collector-Emitter Saturation Voltage IC= 10 A; IB= 150mA 2 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 8 A; IB= 100mA 2.2 V V BE(sat)-2 Base-Emitter Saturation Voltage IC= 10A; IB= 250mA 2.5 V V BE(on)-1 Base-Emitter On Voltage IC= 5A ; VCE= 2V 1.67 V V BE(on)-2 Base-Emitter On Voltage IC= 10A ; VCE= 2V 2 V ICE(off) Collector Cutoff Current VCC= 16V;VBE= 300mV;TJ= 125℃ 0.5 mA ICL Clamping Current VCE= 350V;IB= 0 0.25 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 50 mA hFE DC Current Gain IC= 5A ; VCE= 2V VECF C-E Diode Forward Voltage IF= 10A 2.5 V VCL isc Website：www.iscsemi.cn 350 350 B B 300