isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 120V(Min) ·High DC Current Gain : hFE= 1000(Min) @IC= 4A ·Low Collector Saturation Voltage APPLICATIONS ·Designed for low frequency power amplifiers applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 8 A ICP Collector Current-Peak 12 A PC Collector Power Dissipation @ TC=25℃ 40 W TJ Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature Range isc Website：www.iscsemi.cn 2SD1248 isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1248 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA; RBE= ∞ V(BR)EBO Emitter -Base Breakdown Voltage IE= 100mA; IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 8mA 1.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 8A; IB= 80mA 3.0 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 4A; IB= 8mA 2.0 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= 8A; IB= 80mA 3.5 V ICBO Collector Cutoff Current VCB= 120V; IE= 0 100 μA ICEO Collector Cutoff Current VCE= 100V; RBE= ∞ 10 μA hFE DC Current Gain IC= 4A; VCE= 3V VECF C-E Diode Forward Voltage IF= 8A isc Website：www.iscsemi.cn CONDITIONS MIN MAX UNIT 120 V 7 V B B B B 2 TYP. 1000 20000 3.0 V