isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUV10 DESCRIPTION ·High Switching Speed ·High Current Capability APPLICATIONS ·Designed for high current,high speed,high power applications. Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VALUE UNIT 7 n c . i m e VCBO Collector-Base Voltage 160 VCEX Collector-Emitter Voltage VBE= -1.5V 160 VCER Collector-Emitter Voltage RBE= 100Ω VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage V V s c s i . w w w 140 125 V V V IC Collector Current-Continuous 25 A ICM Collector Current-Peak 30 A IB Base Current-Continuous 6 A PC Collector Power Dissipation @TC=25℃ 150 W Tj Junction Temperature 200 ℃ -65~200 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case isc Website：www.iscsemi.cn MAX UNIT 1.0 ℃/W isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUV10 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A; IB= 0; L= 25mH V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 10A; IB= 1A 1.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 20A ;IB= 2A 2.0 V Base-Emitter Saturation Voltage IC= 10A; IB= 1A 1.5 V VCE= 100V; IB= 0 1.5 mA VCE= 160V;VBE= -1.5V VCE= 160V;VBE= -1.5V;TC=125℃ 1.5 6.0 mA VEB= 5V; IC= 0 0.5 mA VBE(sat) ICEO Collector Cutoff Current ICEX Collector Cutoff Current IEBO Emitter Cutoff Current hFE-1 DC Current Gain hFE-2 DC Current Gain fT CONDITIONS Current-Gain—Bandwidth Product isc Website：www.iscsemi.cn TYP. MAX UNIT 125 V 7 V n c . i m e s c is . w w w MIN IC= 10A ; VCE= 4V 20 IC= 20A ; VCE= 4V 10 IC= 1A; VCE= 15V 8 60 MHz