ISC 2SD2112

isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
DESCRIPTION
·Collector-Emitter Breakdown Voltage: V(BR)CEO= 120V(Min)
·Collector-Emitter Saturation Voltage: VCE(sat)= 1.5V(Max) @IC= 3A
·High DC Current Gain
: hFE= 1000(Min) @ IC= 3A, VCE= 3V
APPLICATIONS
·Designed for low frequency power amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
120
V
VCEO
Collector-Emitter Voltage
120
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
6
A
ICM
Collector Current-Peak
12
A
Collector Power Dissipation
@ TC=25℃
25
W
PC
Collector Power Dissipation
@ Ta=25℃
TJ
Tstg
Junction Temperature
Storage Temperature Range
isc Website:www.iscsemi.cn
2
150
℃
-55~150
℃
2SD2112
isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
2SD2112
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 25mA ; RBE= ∞
120
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC= 0.1mA; IE= 0
120
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= 50mA; IC= 0
7
V
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 3A; IB= 6mA
1.5
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= 6A; IB= 60mA
3.0
V
VBE(sat)-1
Base-Emitter Saturation Voltage
IC= 3A; IB= 6mA
2.0
V
VBE(sat)-2
Base-Emitter Saturation Voltage
IC= 6A; IB= 60mA
3.5
V
ICBO
Collector Cutoff Current
VCB= 100V; IE= 0
10
μA
ICEO
Collector Cutoff Current
VCE= 100V; RBE= ∞
10
μA
hFE
DC Current Gain
IC= 3A; VCE= 3V
VECF
C-E Diode Forward Voltage
IF= 6A
isc Website:www.iscsemi.cn
CONDITIONS
MIN
B
B
B
B
2
1000
TYP.
MAX
UNIT
20000
3.0
V