isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BDT41/A/B/C DESCRIPTION ·DC Current Gain -hFE = 30(Min)@ IC= 0.3A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 40V(Min)- BDT41; 60V(Min)- BDT41A 80V(Min)- BDT41B; 100V(Min)- BDT41C ·Complement to Type BDT42/42A/42B/42C APPLICATIONS ·Designed for use in general purpose amplifer and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO PARAMETER VALUE BDT41 80 BDT41A 100 BDT41B 120 BDT41C 140 BDT41 40 BDT41A 60 BDT41B 80 BDT41C 100 Collector-Base Voltage UNIT V Collector-Emitter Voltage V Emitter-Base Voltage 5 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak 10 A IB Base Current 3 A PC Collector Power Dissipation TC=25℃ 65 W Tj Junction Temperature 150 ℃ -65~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case Rth j-a Thermal Resistance,Junction to Ambient isc Website：www.iscsemi.cn MAX UNIT 1.92 ℃/W 70 ℃/W isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BDT41/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDT41 VCEO(SUS) Collector-Emitter Sustaining Voltage MIN TYP. MAX UNIT 40 BDT41A 60 IC= 30mA; IB= 0 V BDT 41B 80 BDT 41C 100 VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 0.6A 1.5 V VBE(on) Base-Emitter On Voltage IC= 6A ; VCE= 4V 2.0 V ICES Collector Cutoff Current VCE= VCEOmax; VBE= 0 0.4 mA ICEO Collector Cutoff Current 0.2 mA 0.5 mA B BDT41/A VCE= 30V; IB= 0 BDT41B/C VCE= 60V; IB= 0 B B IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 0.3A ; VCE= 4V 30 hFE-2 DC Current Gain IC= 3A ; VCE= 4V 15 Current-Gain—Bandwidth Product IC= 0.5A ; VCE= 10V 3 fT 75 MHz Switching Times ton Turn-On Time toff Turn-Off Time 0.6 μs 1.0 μs IC= 6A; IB1= -IB2= 0.6A isc Website：www.iscsemi.cn