isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors BDT82F/84F/86F/88F DESCRIPTION ·DC Current Gain -hFE = 40(Min)@ IC= -5A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = -60V(Min)- BDT82F; -80V(Min)- BDT84F; -100V(Min)- BDT86F; -120V(Min)- BDT88F ·Complement to Type BDT81F/83F/85F/87F APPLICATIONS ·Designed for use in audio output stages and general amplifer and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO PARAMETER VALUE BDT82F -60 BDT84F -80 BDT86F -100 BDT88F -120 BDT82F -60 BDT84F -80 BDT86F -100 BDT88F -120 Collector-Base Voltage UNIT V Collector-Emitter Voltage V Emitter-Base Voltage -7 V IC Collector Current-Continuous -15 A ICM Collector Current-Peak -20 A IB Base Current -4 A PC Collector Power Dissipation TC=25℃ 36 W Tj Junction Temperature 150 ℃ -65~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case isc Website：www.iscsemi.cn MAX UNIT 6 ℃/W isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors BDT82F/84F/86F/88F ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDT82F VCEO(SUS) Collector-Emitter Sustaining Voltage MIN TYP. MAX UNIT -60 BDT84F -80 IC= -30mA; IB= 0 V BDT86F -100 BDT88F -120 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A -1.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -7A; IB= -0.7A -1.6 V VBE(on) Base-Emitter On Voltage IC= -5A ; VCE= -4V -1.5 V ICES Collector Cutoff Current VCE= 0.8VCBOmax; VBE= 0 -1 mA ICBO Collector Cutoff Current VCB= VCBOmax; IE= 0 -0.2 mA IEBO Emitter Cutoff Current VEB= -7V; IC= 0 -0.1 mA hFE-1 DC Current Gain IC= -50mA ; VCE= -10V 40 hFE-2 DC Current Gain IC= -5A ; VCE= -4V 40 Current-Gain—Bandwidth Product IC= -0.5A ; VCE= -10V fT B B 20 MHz Switching Times ton Turn-On Time toff Turn-Off Time 1 μs 2 μs IC= -7A; IB1= -IB2= -0.7A isc Website：www.iscsemi.cn