isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors TIP42E DESCRIPTION ·DC Current Gain -hFE = 30(Min)@ IC= -0.3A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = -140V(Min) ·Complement to Type TIP41E APPLICATIONS ·Designed for use in general purpose amplifer and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage -140 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -6 A ICM Collector Current-Peak -10 A IB Base Current -3 A Collector Power Dissipation TC=25℃ 65 Collector Power Dissipation Ta=25℃ 2 B PC Tj Tstg Junction Temperature Storage Temperature Range W 150 ℃ -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.92 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors TIP42E ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -6A; IB= -1.5A -1.5 V VBE(on) Base-Emitter On Voltage IC= -6A; VCE= -4V -2.0 V ICES Collector Cutoff Current VCE= -180V; VBE= 0 -0.4 mA ICEO Collector Cutoff Current VCE= -90V; IB= 0 -0.7 mA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -1.0 mA hFE-1 DC Current Gain IC= -0.3A ; VCE= -4V 30 hFE-2 DC Current Gain IC= -3A ; VCE= -4V 15 Current-Gain—Bandwidth Product IC= -0.5A; VCE= -10V 3 fT -140 UNIT B B V MHz Switching Time ton Turn-On Time 0.6 μs 1.0 μs IC= -6A; IB1= -IB2= -0.6A; VBE(off)= -4V, RL= 5Ω toff Turn-Off Time isc Website：www.iscsemi.cn