Inchange Semiconductor Product Specification S2000N Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-3P(H)IS package ・High voltage,high speed ・Low collector saturation voltage APPLICATIONS ・Color TV horizontal output applications ・Color TV switching regulator applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol 体 导 半 Absolute maximum ratings (Ta=25℃) 固电 SYMBOL OND VALUE UNIT 1500 V 700 V 5 V Collector current 8 A ICM Collector current-peak 15 A IB Base current 4 A PC Collector power dissipation 50 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ VALUE UNIT 2.5 ℃/W VCBO VCEO VEBO IC PARAMETER R O T UC CONDITIONS C I M E S E NG Collector-base voltage A H C IN Open emitter Collector-emitter voltage Open base Emitter-base voltage Open collector TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case Inchange Semiconductor Product Specification S2000N Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IB=500mA ;VBE=-1.7V;L=40mH V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 VCEsat-1 Collector-emitter saturation voltage IC=4.5A ;IB=2.0A 1.0 V VCEsat-2 Collector-emitter saturation voltage IC=4.5A ;IB=1.0A 5.0 V Base-emitter saturation voltage IC=4.5A ;IB=1.0A 1.2 V ICBO Collector cut-off current VCB=1500V; VBE=0 1 mA hFE-1 DC current gain IC=1A ; VCE=5V hFE-2 DC current gain VBEsat COB fT 体 导 半 固电 IN Switching times ts CHA MIN TYP. MAX UNIT 700 V 5 V 10 30 R O T UC D N O IC IC=4.5A ; VCE=5V EM S E NG Collector output capacitance Transition frequency CONDITIONS 4.5 9 IE=0 ; VCB=10V;f=1MHz 95 pF IC=0.1A ; VCE=10V 2 MHz Storage time 8 12 μs 0.4 0.7 μs ICP=4.5A;IB1(end)=1.0A fH=15.75kHz tf Fall time 2 Inchange Semiconductor Product Specification S2000N Silicon NPN Power Transistors PACKAGE OUTLINE 体 导 半 固电 EM S E NG A H C IN R O T UC D N O IC Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3