Inchange Semiconductor Product Specification S2055AF Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-3P(H)IS package ・High voltage ;high speed ・Built-in damper diode APPLICATIONS ・Horizontal deflection for color TV PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol 体 导 半 Absolute maximum ratings (Ta=25℃) 固电 SYMBOL OND VALUE UNIT 1500 V 700 V 5 V Collector current 8 A ICM Collector current-peak 15 A PC Collector power dissipation 50 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ VALUE UNIT 2.5 ℃/W VCBO VCEO VEBO IC PARAMETER R O T UC CONDITIONS C I M E S E NG Collector-base voltage A H C IN Open emitter Collector-emitter voltage Open base Emitter-base voltage Open collector TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case Inchange Semiconductor Product Specification S2055AF Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=4.5A ;IB=2.0A 1.0 V VBEsat Base-emitter saturation voltage IC=4.5A ;IB=2.0A 1.3 V ICES Collector cut-off current VCE=1500V; VBE=0 TC=125℃ 1 2 mA IEBO Emitter cut-off current VEB=5V; IC=0 300 mA hFE DC current gain IC=1A ; VCE=5V Transition frequency IC=0.1A ; VCE=5V;f=5MHz fT 体 导 半 CONDITIONS Switching times inductive load ts tf 固电 Storage time Fall time EM S E NG 2 TYP. MAX 700 UNIT V 8 7 R O T UC D N O IC IC=4.5A ; hFE=2.5; VCC=140V LC=0.9mH; LB=3μH A H C IN MIN MHz 7 μs 0.55 μs Inchange Semiconductor Product Specification S2055AF Silicon NPN Power Transistors PACKAGE OUTLINE 体 导 半 固电 EM S E NG A H C IN R O T UC D N O IC Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3