ISC S2055N

Inchange Semiconductor
Product Specification
S2055N
Silicon NPN Power Transistors
・
DESCRIPTION
・With TO-3P(H)IS package
・High voltage,high speed
・Low collector saturation voltage
・Built-in damper diode
APPLICATIONS
・Color TV horizontal output applications
・Color TV switching regulator applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-3P(H)IS) and symbol
体
导
半
Absolute maximum ratings (Ta=25℃)
固电
SYMBOL
VCBO
VCEO
VEBO
EM
S
E
NG
PARAMETER
CONDITIONS
Collector-base voltage
Open emitter
Collector-emitter voltage
Open base
Emitter-base voltage
Open collector
A
H
C
IN
D
N
O
IC
R
O
T
UC
VALUE
UNIT
1500
V
700
V
5
V
IC
Collector current
8
A
ICM
Collector current-peak
15
A
IB
Base current
4
A
PC
Collector power dissipation
50
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
VALUE
UNIT
2.5
℃/W
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-C
PARAMETER
Thermal resistance from junction to case
Inchange Semiconductor
Product Specification
S2055N
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-emitter sustaining voltage
IB=500mA ;VBE=-1.7V;L=40mH
VCEsat-1
Collector-emitter saturation voltage
IC=4.5A ;IB=2.0A
1.0
V
VCEsat-2
Collector-emitter saturation voltage
IC=4.5A ;IB=1.0A
5.0
V
Base-emitter saturation voltage
IC=4.5A ;IB=1.0A
1.2
V
ICBO
Collector cut-off current
VCB=1500V; VBE=0
1
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
300
mA
hFE-1
DC current gain
IC=1A ; VCE=5V
hFE-2
DC current gain
VBEsat
COB
fT
体
导
半
固电
CHA
IN
MIN
TYP.
MAX
700
UNIT
V
10
30
R
O
T
UC
D
N
O
IC
IC=4.5A ; VCE=5V
EM
S
E
NG
Collector output capacitance
Transition frequency
CONDITIONS
4.5
9
IE=0 ; VCB=10V;f=1MHz
95
pF
IC=0.1A ; VCE=10V
2
MHz
2
Inchange Semiconductor
Product Specification
S2055N
Silicon NPN Power Transistors
PACKAGE OUTLINE
体
导
半
固电
EM
S
E
NG
A
H
C
IN
R
O
T
UC
D
N
O
IC
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3