ISC 2N6836

Inchange Semiconductor
Product Specification
2N6836
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3 package
・High voltage ,high speed
APPLICATIONS
・Switching regulators
・Inverters
・Motor controls
・Deflection circuits
PINNING
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
850
V
VCEO
Collector-emitter voltage
Open base
450
V
VEBO
Emitter-base voltage
Open collector
6
V
IC
Collector current
15
A
ICM
Collector current-peak
20
A
IB
Base current
10
A
IBM
Base current-peak
15
A
PC
Collector power dissipation
175
W
Tj
Junction temperature
200
℃
Tstg
Storage temperature
-65~200
℃
VALUE
UNIT
1.0
℃/W
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance junction to case
Inchange Semiconductor
Product Specification
2N6836
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.1A ;IB=0
VCEsat-1
Collector-emitter saturation voltage
IC=5A; IB=0.7A
1.2
V
VCEsat-2
Collector-emitter saturation voltage
IC=10A; IB=1.0A
TC=100℃
2.5
3.0
V
Base-emitter saturation voltage
IC=10A; IB=1.0A
TC=100℃
1.5
1.5
V
ICEV
Collector cut-off current
VCE=850V; VBE=-1.5V
TC=100℃
0.25
1.5
mA
IEBO
Emitter cut-off current
VEB=6V; IC=0
1.0
mA
hFE-1
DC current gain
IC=10A ; VCE=5V
8
hFE-2
DC current gain
IC=15A ; VCE=5V
5
COB
Output capacitance
IE=0 ; VCB=10V;f=1MHz
50
400
pF
fT
Transition frequency
IC=0.25A ; VCE=10V;f=10MHz
10
75
MHz
VBEsat
CONDITIONS
2
MIN
TYP.
MAX
450
UNIT
V
30
Inchange Semiconductor
Product Specification
2N6836
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3