isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector Current -IC= -8A ·High DC Current Gain: hFE= 500(Min)@ IC= -2A ·Complement to Type BDX53F APPLICATIONS ·Designed for use in power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCER Collector-Emitter Voltage -160 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A ICM Collector Current-Peak -12 A IB Base Current-Continuous -0.2 A PC Collector Power Dissipation @ TC=25℃ 60 W TJ Junction Temperature 150 ℃ -65~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case Rth j-a Thermal Resistance, Junction to Ambient isc Website：www.iscsemi.cn MAX UNIT 2.08 ℃/W 70 ℃/W BDX54F isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor BDX54F ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -50mA ;IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -10mA -2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= -2A; IB= -10mA -2.5 V VECF C-E Diode Forward Voltage IF= -2A -2.5 V ICEO Collector Cutoff Current VCE= -80V; IB= 0 -0.5 mA ICBO Collector Cutoff Current VCB= -160V; IE= 0 -0.2 mA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -5 mA hFE-1 DC Current Gain IC= -2A ; VCE= -5V 500 hFE-2 DC Current Gain IC= -3A ; VCE= -5V 150 isc Website：www.iscsemi.cn CONDITIONS B MIN MAX -160 B B B 2 TYP. UNIT V