isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors TIP54 DESCRIPTION ·DC Current Gain -hFE = 30~150@ IC= 0.3A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 400V(Min) APPLICATIONS ·Designed for line operated audio output amplifier,and switching power supply drivers applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage VALUE s c s .i ww w IC Collector Current-Continuous ICM n c . i m e UNIT 500 400 5 V V V 3.0 A Collector Current-Peak 5.0 A IB Base Current 0.6 A PD Collector Power Dissipation TC=25℃ 100 W Tj Junction Temperature 150 ℃ -65~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case isc Website：www.iscsemi.cn MAX UNIT 1.25 ℃/W isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors TIP54 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.6A 1.5 V VBE(on) Base-Emitter On Voltage IC= 3A; VCE= 10V 1.5 V ICES Collector Cutoff Current VCE= 500V; VBE= 0 1.0 mA ICEO Collector Cutoff Current VCE= 300V; IB= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 1.0 mA hFE-1 DC Current Gain hFE-2 DC Current Gain fT B n c . i m e s c s i . w w w Current-Gain—Bandwidth Product isc Website：www.iscsemi.cn 400 UNIT IC= 0.3A; VCE= 10V 30 IC= 3A; VCE= 10V 10 IC= 0.2A; VCE= 10V 2.5 V 150 MHz