isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors 2N4909 DESCRIPTION ·Low Collector Saturation Voltage: VCE(sat)= -0.75V(Max.)@ IC= -4A ·DC Current Gain: hFE= 20-80 @IC= -4A APPLICATIONS ·Designed for general purpose use in power amplifier and switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -10 A IB Base Current-Continuous -4 A PC Collector Power Dissipation@TC=25℃ 150 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case isc Website：www.iscsemi.cn MAX UNIT 2.0 ℃/W isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors 2N4909 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -200mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB= -0.4A -0.75 V VBE(sat) Base-Emitter Saturation Voltage IC= -4A; IB= -0.4A -1.5 V VBE(on) Base-Emitter On Voltage IC= -4A; VCE= -4V -1.5 V ICEO Collector Cutoff Current VCE= -80V; IB= 0 -1.0 mA ICBO Collector Cutoff Current VCB= -80V; IE= 0 -0.1 mA ICEX Collector Cutoff Current VCE= -80V; VBE(off)= -1.5V VCE= -80V; VBE(off)= -1.5V, TC=150℃ -0.1 -2.0 mA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -1.0 mA hFE-1 DC Current Gain IC= -4A; VCE= -4V 20 hFE-2 DC Current Gain IC= -10A; VCE= -4V 5 Current-Gain—Bandwidth Product IC= -1A; VCE= -10V; ftest= 1.0MHz 4 fT isc Website：www.iscsemi.cn CONDITIONS 2 MIN MAX -80 UNIT V 80 MHz