isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2N6107 DESCRIPTION ·DC Current Gain: hFE = 30-150@ IC= -2A ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= -70V(Min) ·Complement to Type 2N6292 APPLICATIONS ·Designed for use in general-purpose amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage n c . i m e VALUE UNIT -80 V -70 V -5 V s c s i . w w w IC Collector Current-Continuous -7 A ICM Collector Current-Peak -10 A IB Base Current -3 A PC Collector Power Dissipation @ TC=25℃ 40 W TJ Junction Temperature 150 ℃ -65~150 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case isc Website：www.iscsemi.cn MAX UNIT 3.125 ℃/W isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2N6107 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -100mA ;IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -7A; IB= -3A -3.5 V VBE(on) Base-Emitter On Voltage IC= -7A ; VCE= -4V -3.0 V ICEX Collector Cutoff Current VCE= -80V; VBE(off)= -1.5V VCE= -70V; VBE(off)= -1.5V; TC= 150℃ -0.1 -2.0 mA ICEO Collector Cutoff Current VCE= -60V;IB= 0 -1.0 mA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -1.0 mA hFE-1 DC Current Gain hFE-2 DC Current Gain COB Output Capacitance fT CONDITIONS w Current-Gain—Bandwidth Product isc Website：www.iscsemi.cn IC= -2A ; VCE= -4V 30 IC= -7A ; VCE= -4V 2.3 IE= 0 ; VCB= -10V; ftest= 1MHz IC= -0.5A ; VCE= -4V; ftest= 1MHz 2 MAX -70 n c . i m e s c s .i ww MIN 10 UNIT V 150 250 pF MHz