TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/291 DEVICES LEVELS 2N2906A 2N2906AL 2N2906AUA 2N2906AUB 2N2906AUBC 2N2907A 2N2907AL 2N2907AUA 2N2907AUB 2N2907AUBC JANSM – 3K Rads (Si) JANSD – 10K Rads (Si) JANSP – 30K Rads (Si) JANSL – 50K Rads (Si) JANSR – 100K Rads (Si) ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Collector-Emitter Voltage VCEO 60 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage VEBO 5.0 Vdc IC 600 mAdc 0.5 W Top, Tstg -65 to +200 °C Symbol Max. Unit RθJA (1) 325 °C/W Collector Current Total Power Dissipation @ TA = +25°C PT Operating & Storage Junction Temperature Range (1) TO-18 (TO-206AA) 2N2906A, 2N2907A THERMAL CHARACTERISTICS Parameters / Test Conditions Thermal Resistance, Junction-to-Ambient 4 PIN 1. See MIL-PRF-19500/291 for derating curves. 2N2906AUA, 2N2907AUA ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions Symbol Min. V(BR)CEO 60 Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 10mAdc Vdc Collector-Base Cutoff Current VCB = 60Vdc VCB = 50Vdc 10 10 μAdc ηAdc IEBO 10 50 μAdc ηAdc ICES 50 ηAdc ICBO Emitter-Base Cutoff Current VEB = 5.0Vdc VEB = 4.0Vdc Collector-Emitter Cutoff Current VCE = 50Vdc T4-LDS-0055 Rev. 4 (100247) 3 PIN 2N2906AUB, 2N2907AUB 2N2906AUBC, 2N2907AUBC (UBC = Ceramic Lid Version) Page 1 of 6 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions ON CHARACTERISTICS Symbol Min. Max. Unit (2) Forward-Current Transfer Ratio IC = 0.1mAdc, VCE = 10Vdc 2N2906A, L, UA, UB, UBC 2N2907A, L, UA, UB, UBC 40 75 IC = 1.0mAdc, VCE = 10Vdc 2N2906A, L, UA, UB, UBC 2N2907A, L, UA, UB, UBC 40 100 IC = 10mAdc, VCE = 10Vdc 2N2906A, L, UA, UB, UBC 2N2907A, L, UA, UB, UBC IC = 150mAdc, VCE = 10Vdc 2N2906A, L, UA, UB, UBC 2N2907A, L, UA, UB, UBC 40 100 IC = 500mAdc, VCE = 10Vdc 2N2906A, L, UA, UB, UBC 2N2907A, L, UA, UB, UBC 40 50 hFE Collector-Emitter Saturation Voltage IC = 150mAdc, IB = 15mAdc IC = 500mAdc, IB = 50mAdc VCE(sat) Base-Emitter Voltage IC = 150mAdc, IB = 15mAdc IC = 500mAdc, IB = 50mAdc VBE(sat) 175 450 40 100 120 300 0.4 1.6 Vdc 0.6 1.3 2.6 Vdc Symbol Min. Max. Unit hfe 40 100 Cobo 8.0 pF Cibo 30 pF Max. Unit ton 45 ηs toff 300 ηs DYNAMIC CHARACTERISTICS Parameters / Test Conditions Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 1.0mAdc, VCE = 10Vdc, f = 1.0kHz 2N2906A, L, UA, UB, UBC 2N2907A, L, UA, UB, UBC Magnitude of Small–Signal Short-Circuit Forward Current Transfer Ratio IC = 20mAdc, VCE = 20Vdc, f = 100MHz Output Capacitance VCB = 10Vdc, IE = 0, 100kHz ≤ f ≤ 1.0MHz Input Capacitance VEB = 2.0Vdc, IC = 0, 100kHz ≤ f ≤ 1.0MHz |hfe| 2.0 SWITCHING CHARACTERISTICS Parameters / Test Conditions Turn-On Time See MIL-PRF-19500/291 Turn-Off Time See MIL-PRF-19500/291 Symbol Min. (2) Pulse Test: Pulse Width = 300μs, Duty Cycle ≤ 2.0%. T4-LDS-0055 Rev. 4 (100247) Page 2 of 6 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com PACKAGE DIMENSIONS NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Beyond r (radius) maximum, TW shall be held for a minimum length of .011 inch (0.28 mm). 4. Dimension TL measured from maximum HD. 5. Body contour optional within zone defined by HD, CD, and Q. 6. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. 7. Dimension LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum. Diameter is uncontrolled in L1 and beyond LL minimum. 8. All three leads. 9. The collector shall be internally connected to the case. 10. Dimension r (radius) applies to both inside corners of tab. 11. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology. 12. Lead 1 = emitter, lead 2 = base, lead 3 = collector. 13. For L suffix devices, dimension LL = 1.5 inches (38.10 mm) min. and 1.75 inches (44.45 mm) max. Symbol CD CH HD LC LD LL LU L1 L2 P Q TL TW r α Dimensions Inches Millimeters Min Max Min Max .178 .195 4.52 4.95 .170 .210 4.32 5.33 .209 .230 5.31 5.84 .100 TP 2.54 TP .016 .021 0.41 0.53 .500 .750 12.70 19.05 .016 .019 0.41 0.48 .050 1.27 .250 6.35 .100 2.54 .030 0.76 .028 .048 0.71 1.22 .036 .046 0.91 1.17 .010 0.25 45° TP 45° TP Note 6 7,8 7,8,13 7,8 7,8 7,8 5 3,4 3 10 6 FIGURE 1. Physical dimensions (similar to TO-18) T4-LDS-0055 Rev. 4 (100247) Page 3 of 6 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Dimension CH controls the overall package thickness. When a window lid is used, dimension CH must increase by a minimum of .010 inch (0.254 mm) and a maximum of .040 inch (1.020 mm). 4. The corner shape (square, notch, radius) may vary at the manufacturer's option, from that shown on the drawing. 5. Dimensions LW2 minimum and L3 minimum and the appropriate castellation length define an unobstructed three-dimensional space traversing all of the ceramic layers in which a castellation was designed. (Castellations are required on the bottom two layers, optional on the top ceramic layer.) Dimension “LW2” maximum and “L3” maximum define the maximum width and depth of the castellation at any point on its surface. Measurement of these dimensions may be made prior to solder dipping. 6. The co-planarity deviation of all terminal contact points, as defined by the device seating plane, shall not exceed .006 inch (0.15mm) for solder dipped leadless chip carriers. 7. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology. Symbol BL BL2 BW BW2 CH L3 LH LL1 LL2 LS LW LW2 Pin no. Transistor Dimensions Inches Millimeters Min Max Min Max .215 .225 5.46 5.71 .225 5.71 .145 .155 3.68 3.93 .155 3.93 .061 .075 1.55 1.90 .003 .007 0.08 0.18 .029 .042 0.74 1.07 .032 .048 0.81 1.22 .072 .088 1.83 2.23 .045 .055 1.14 1.39 .022 .028 0.56 0.71 .006 .022 0.15 0.56 1 Collector 2 Emitter 3 Base Note 3 5 5 4 N/C FIGURE 2. Physical dimensions, surface mount (UA version) T4-LDS-0055 Rev. 4 (100247) Page 4 of 6 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com UB Symbol BH BL BW CL CW LL1 LL2 Dimensions Inches Millimeters Min Max Min Max .046 .056 1.17 1.42 .115 .128 2.92 3.25 .085 .108 2.16 2.74 .128 3.25 .108 2.74 .022 .038 0.56 0.96 .017 .035 0.43 0.89 Note Symbol LS1 LS2 LW r r1 r2 Dimensions Inches Millimeters Min Max Min Max .036 .040 0.91 1.02 .071 .079 1.81 2.01 .016 .024 0.41 0.61 .008 .203 .012 .305 .022 .559 Note NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 = Shielding connected to the lid. 4. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology. FIGURE 3. Physical dimensions, surface mount (UB version) T4-LDS-0055 Rev. 4 (100247) Page 5 of 6 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com UBC Symbol BH BL BW CL CW LL1 LL2 Dimensions Inches Millimeters Min Max Min Max .046 .071 1.17 1.80 .115 .128 2.92 3.25 .085 .108 2.16 2.74 .128 3.25 .108 2.74 .022 .038 0.56 0.96 .017 .035 0.43 0.89 Note Symbol LS1 LS2 LW r r1 r2 Dimensions Inches Millimeters Min Max Min Max .036 .040 0.91 1.02 .071 .079 1.81 2.01 .016 .024 0.41 0.61 .008 .203 .012 .305 .022 .559 Note NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Hatched areas on package denote metalized areas. 4. Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 = Connected to the lid braze ring. 5. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology. FIGURE 4. Physical dimensions, surface mount (UBC version, ceramic lid) T4-LDS-0055 Rev. 4 (100247) Page 6 of 6