September 2005 RMPA2458 2.4–2.5 GHz InGaP HBT Low Current Linear Power Amplifier Features General Description ■ ■ ■ ■ ■ ■ ■ ■ ■ The RMPA2458 power amplifier is designed for high performance WLAN applications in the 2.4–2.5 GHz frequency band. The low profile 16 pin 3 x 3 x 0.9 mm package with internal matching on both input and output to 50 Ohms minimizes next level PCB space and allows for simplified integration. The onchip detector provides power sensing capability while the bias control provides power saving shutdown capability. The PA’s industry leading low power consumption and excellent linearity are achieved using our InGaP Heterojunction Bipolar Transistor (HBT) technology. 31.5dB small signal gain 27dBm output power @ 1dB compression 103mA total current at 19dBm modulated power out 2.5% EVM at 19 dBm modulated power out 3.3V collector supply operation 2.9V mirror supply operation Power saving shutdown options (bias control) Integrated power detector with 20dB dynamic range Lead-free RoHS compliant 3 x 3 x 0.9mm leadless package ■ Internally matched to 50 Ohms and DC blocked RF input/ output ■ Optimized for use in 802.11b/g applications Device Electrical Characteristics1 802.11g OFDM Modulation (176 µs burst time, 100 µs idle time) 54 Mbps Data Rate, 16.7 MHz Bandwidth Parameter Min Frequency 2.4 Collector Supply Voltage 3.0 Typ Max Units 2.5 GHz 3.3 3.6 V Mirror Supply Voltage 2.9 V Mirror Supply Current 3.3 mA Gain 31.5 dB Total Current @ 19dBm POUT 103 mA EVM @ 19dBm POUT2 2.5 % Detector Output @ 19dBm POUT 340 mV 5 dBm Detector Threshold3 Notes: 1. VC1, VC2, VC3 = 3.3V, VM123 = 2.9V, TA = 25°C, PA is constantly biased, 50Ω system. 2. Percentage includes system noise floor of EVM = 0.8%. 3. POUT measured at PIN corresponding to power detection threshold. ©2005 Fairchild Semiconductor Corporation RMPA2458 Rev. E 1 www.fairchildsemi.com RMPA2458 2.4–2.5 GHz InGaP HBT Low Current Linear Power Amplifier Preliminary (RF not framed) 11 Mbps Data Rate 22.0 MHz Bandwidth Parameter Min Frequency 2.4 Collector Supply Voltage 3.0 Typ 3.3 Max Units 2.5 GHz 3.6 V Mirror Supply Voltage 2.9 V Mirror Supply Current 3.3 mA Gain 32 dB Total Current @ 19dBm Pout 130 mA First Side Lobe Power @ 19dBm Pout -36 dBm Second Side Lobe Power @ 19dBm Pout -60 dBm Max Pout Spectral Mask Compliance2 24 dBm Detector Output @ 19dBm Pout Detector Pout Threshold3 1.15 V 5 dBm Electrical Characteristics1 Single Tone Parameter Min Frequency 2.4 Collector Supply Voltage 3.0 Mirror Supply Voltage (VM123) 2.6 Gain Typ Max Units 2.5 GHz 3.3 3.6 V 2.9 3.1 V 31.5 dB Total Quiescent Current 49 mA Bias Current at pin VM1234 3.2 mA P1dB Compression 27 dBm Current @ P1dB Compression 600 mA Shutdown Current (VM123 = 0V) <1.0 µA 12 dB 9 dB 2.4 V Input Return Loss Output Return Loss Detector Output at P1dB Compression Detector Pout Threshold3 5 V Turn-on Time5 <1.0 µS Spurious (Stability)6 -65 dBc Notes: 1. VC1, VC2, VC3 = 3.3V, VM123 = 2.9 Volts, Ta = 25°C, PA is constantly biased, 50Ω system. 2. PIN is adjusted to point where performance approaches spectral mask requirements. 3. POUT measured at PIN corresponding to power detection threshold. 4. Mirror bias current is included in the total quiescent current. 5. Measured from Device On signal turn on to the point where RF POUT stabilizes to 0.5dB. 6. Load VSWR is set to 8:1 and the angle is varied 360 degrees. POUT = -30dBm to P1dB. 2 RMPA2458 Rev. E www.fairchildsemi.com RMPA2458 2.4–2.5 GHz InGaP HBT Low Current Linear Power Amplifier Electrical Characteristics1 802.11b CCK Modulation Symbol Parameter Ratings Units VC1, VC2, VC3 Positive Supply Voltage 5 V IC1, IC2, IC3 Supply Current IC1 IC2 IC3 50 150 700 mA mA mA VM123 Positive Bias Voltage 3.6 V PIN RF Input Power +5 dBm TCASE Case Operating Temperature -40 to +85 °C TSTG Storage Temperature -55 to +150 °C Note: 1. No permanent damage with one parameter set at extreme limit. Other parameters set to typical values. RF IN GND VDET GND 14 13 VOLTAGE DETECTOR 1 12 2 11 3 4 10 INPUT MATCH GND 5 OUTPUT MATCH 6 7 9 8 3 RMPA2458 Rev. E VC3 N/C GND RF OUT Pin Description 1 VM123 2 VC2 3 GND 4 RF IN 5 GND 6 VC1 7 GND 8 GND 9 RF OUT 10 GND 11 N/C 12 VC3 13 GND 14 VDET 15 GND 16 GND GND GND 15 GND VC2 16 VC1 VM123 GND Functional Block Diagram www.fairchildsemi.com RMPA2458 2.4–2.5 GHz InGaP HBT Low Current Linear Power Amplifier Absolute Ratings1 RMPA2458 2.4–2.5 GHz InGaP HBT Low Current Linear Power Amplifier Performance Data 802.11g OFDM Modulation (176 µs burst time, 100 µs idle time) 54 Mbps Data Rate, 16.7 MHz Bandwidth Total Measured EVM Vs. Modulated Power Out VC=3.3V VM=2.9V T=25°C Gain Vs. Modulated Power Out VC=3.3V VM=2.9V T=25°C 8 34 Note: Uncorrected EVM. Source EVM is approximately 0.8%. 7 6 32 5 2.40 GHz 2.45 GHz 2.50 GHz Gain (dB) Total Measured MVE (%) 33 4 31 3 30 2.40 GHz 2.45 GHz 2.50 GHz 2 29 1 28 0 5 7 9 11 13 15 17 19 21 5 23 7 9 11 13 Modulated Power Out (dBm) 15 17 19 21 23 25 23 25 Modulated Power Out (dBm) Total Current Vs. Modulated Power Out VC=3.3V VM=2.9V T=25°C Detector Voltage Vs. Modulated Power Out VC=3.3V VM=2.9V T=25°C 260 1400 240 1200 220 Detector Voltage (mV) Total Current (mA) 200 180 2.40 GHz 2.45 GHz 2.50 GHz 160 140 120 1000 2.40 GHz 2.45 GHz 2.50 GHz 800 600 100 80 400 60 200 40 5 7 9 11 13 15 17 19 21 23 25 5 7 9 11 Modulated Power Out (dBm) 13 15 17 19 21 Modulated Power Out (dBm) Single Tone S-Parameters Vs. Frequency VC=3.3V VM=2.9V T=25°C Gain Vs. Single Tone Power Out VC=3.3V VM=2.9V T=25°C 0 35 33 32 S21 (dB) 30 -5 25 -10 2.40 GHz 2.45 GHz 2.50 GHz 29 S11, S22 (dB) 30 S21 (dB) Gain (dB) 31 28 S11 (dB) 20 -15 S22 (dB) 27 15 26 5 7 9 11 13 15 17 19 21 23 25 27 2.35 2.45 2.5 -20 2.55 Frequency (GHz) Single Tone Power Out (dBm) 4 RMPA2458 Rev. E 2.4 www.fairchildsemi.com RMPA2458 2.4–2.5 GHz InGaP HBT Low Current Linear Power Amplifier Evaluation Board Schematic 16 15 14 13 1 12 2 11 3 10 4 9 5 6 7 8 Backside Ground Package Outline Dimensions in mm Note: Dimensions do not include protrusions or mold flash. These are not to exceed 0.006" (.155mm) on any side. 5 RMPA2458 Rev. E www.fairchildsemi.com Qty Item No. 1 1 F100039 2 2 #142-0701-841 SMA Connector Johnson 7 3 #S1322-XX-ND RT Angle Sgl M Header Digikey Ref 4 1 5 (C3) 2 6 (C1, C2) 3 7 (C4, C5, C6) 2 Part Number Description PC Board Vendor Fairchild F1XXXXX Assembly, RMPA2458 Fairchild 06035A150J 15pF Capacitor AVX GRM39C0G330J50D500 33pF Capacitor Murata CC1206JX5R106M 10µF Capacitor TDK 8 (L2, L3) LLV1005FB5N6S 5.6nH Inductor Toko 1 9 (L1) LLV1005FH15NK 15nH Inductor Toko A/R 10 SN63 Solder Paste Indium Corp. A/R 11 SN96 Solder Paste Indium Corp. Evaluation Board Layout C5 C6 L3 C2 2458 L2 C1 C3 L1 C4 Actual Board Size = 2.0" X 1.5" 6 RMPA2458 Rev. E www.fairchildsemi.com RMPA2458 2.4–2.5 GHz InGaP HBT Low Current Linear Power Amplifier Evaluation Board Bill of Materials Recommended turn-on sequence: 1) Connect common ground terminal to the Ground (GND) pin on the board. 8) Apply input RF power to SMA connector pin RFIN. Currents in pins VC1, VC2 and VC3 will vary depending on the input drive level. 2) Connect voltmeter to pin DT1 (VDET, voltage detector). 9) Vary positive voltage on pin VM123 from +2.9 V to +0 V to shut down the amplifier or alter the power level. Shut down current flow into the pins: 3) Apply positive supply voltage VC1 (=3.3 V) to pin VC1 (first stage collector). 4) Apply positive supply voltage VC2 (=3.3 V) to pin VC2 (second stage collector). Pin Current 5) Apply positive supply voltage VC3 (=3.3 V) to pin VC3 (third stage collector). VC1 <1 nA VC2 <1 nA 6) Apply positive bias voltage VM123 (=2.9 V) to pin VM123 (bias networks). VC3 <1 nA Recommended turn-off sequence: 7) At this point, you should expect to observe the following positive currents flowing into the pins: Use reverse order described in the turn-on sequence above. Pin Current Note: VM123 1.0 – 5.0 mA 1. Turn on sequence is not critical and it is not necessary to sequence power supplies in actual system level design VC1 1.0 – 9.0 mA VC2 5.0 – 25.0 mA VC3 22.0 – 42.0 mA 7 RMPA2458 Rev. E www.fairchildsemi.com RMPA2458 2.4–2.5 GHz InGaP HBT Low Current Linear Power Amplifier Evaluation Board Turn-On Sequence1 CAUTION: THIS IS AN ESD SENSITIVE DEVICE. Solder Materials & Temperature Profile: Reflow soldering is the preferred method of SMT attachment. Hand soldering is not recommended. Precautions to Avoid Permanent Device Damage: • Cleanliness: Observe proper handling procedures to ensure clean devices and PCBs. Devices should remain in their original packaging until component placement to ensure no contamination or damage to RF, DC and ground contact areas. Reflow Profile • Ramp-up: During this stage the solvents are evaporated from the solder paste. Care should be taken to prevent rapid oxidation (or paste slump) and solder bursts caused by violent solvent out-gassing. A maximum heating rate is 3°C/sec. • Device Cleaning: Standard board cleaning techniques should not present device problems provided that the boards are properly dried to remove solvents or water residues. • Pre-heat/soak: The soak temperature stage serves two purposes; the flux is activated and the board and devices achieve a uniform temperature. The recommended soak condition is: 60-180 seconds at 150-200°C. • Static Sensitivity: Follow ESD precautions to protect against ESD damage: – A properly grounded static-dissipative surface on which to place devices. • General Handling: Handle the package on the top with a vacuum collet or along the edges with a sharp pair of bent tweezers. Avoiding damaging the RF, DC, and ground contacts on the package bottom. Do not apply excessive pressure to the top of the lid. • Reflow Zone: If the temperature is too high, then devices may be damaged by mechanical stress due to thermal mismatch or there may be problems due to excessive solder oxidation. Excessive time at temperature can enhance the formation of inter-metallic compounds at the lead/board interface and may lead to early mechanical failure of the joint. Reflow must occur prior to the flux being completely driven off. The duration of peak reflow temperature should not exceed 20 seconds. Soldering temperatures should be in the range 255–260°C, with a maximum limit of 260°C. • Device Storage: Devices are supplied in heat-sealed, moisture-barrier bags. In this condition, devices are protected and require no special storage conditions. Once the sealed bag has been opened, devices should be stored in a dry nitrogen environment. • Cooling Zone: Steep thermal gradients may give rise to excessive thermal shock. However, rapid cooling promotes a finer grain structure and a more crack-resistant solder joint. The illustration below indicates the recommended soldering profile. Device Usage: Fairchild recommends the following procedures prior to assembly. Solder Joint Characteristics: Proper operation of this device depends on a reliable void-free attachment of the heat sink to the PWB. The solder joint should be 95% void-free and be a consistent thickness. – Static-dissipative floor or mat. – A properly grounded conductive wrist strap for each person to wear while handling devices. • Assemble the devices within one year of removal from the dry pack. Rework Considerations: Rework of a device attached to a board is limited to reflow of the solder with a heat gun. The device should be subjected to no more than 15°C above the solder melting temperature for no more than 5 seconds. No more than 2 rework operations should be performed. • During the one year period, the devices must be stored in an environment of less than 60% relative humidity and a maximum temperature of 30°C • If the one year period or the environmental conditions have been exceeded, then the dry-bake procedure, at 125°C for 24 hours minimum, must be performed. Recommended Solder Reflow Profile Peak tem p 260 +0/-5 °C 10 - 20 sec 260 Temperature (°C) Ramp-Up R ate 3 °C/sec max 217 200 Time above li quidus temp 60 - 150 sec 150 Preheat, 150 to 200 °C 60 - 180 sec 100 Ramp-Up R ate 3 °C/sec max Ramp-Do wn Rate 6 °C/sec max 50 25 Time 25 °C/sec t o peak tem p 6 mi nutes max Time (Sec) 8 RMPA2458 Rev. E www.fairchildsemi.com RMPA2458 2.4–2.5 GHz InGaP HBT Low Current Linear Power Amplifier Applications Information The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ Build it Now™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DOME™ HiSeC™ EcoSPARK™ I2C™ E2CMOS™ i-Lo™ EnSigna™ ImpliedDisconnect™ FACT™ IntelliMAX™ FACT Quiet Series™ Across the board. Around the world.™ The Power Franchise Programmable Active Droop™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench QFET QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ SILENT SWITCHER SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic TINYOPTO™ TruTranslation™ UHC™ UltraFET UniFET™ VCX™ Wire™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I16 9 RMPA2458 Rev. E www.fairchildsemi.com RMPA2458 2.4–2.5 GHz InGaP HBT Low Current Linear Power Amplifier TRADEMARKS