FAIRCHILD RMPA2458_059

September 2005
RMPA2458
2.4–2.5 GHz InGaP HBT Low Current Linear Power Amplifier
Features
General Description
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The RMPA2458 power amplifier is designed for high
performance WLAN applications in the 2.4–2.5 GHz frequency
band. The low profile 16 pin 3 x 3 x 0.9 mm package with internal
matching on both input and output to 50 Ohms minimizes next
level PCB space and allows for simplified integration. The onchip detector provides power sensing capability while the bias
control provides power saving shutdown capability. The PA’s
industry leading low power consumption and excellent linearity
are achieved using our InGaP Heterojunction Bipolar Transistor
(HBT) technology.
31.5dB small signal gain
27dBm output power @ 1dB compression
103mA total current at 19dBm modulated power out
2.5% EVM at 19 dBm modulated power out
3.3V collector supply operation
2.9V mirror supply operation
Power saving shutdown options (bias control)
Integrated power detector with 20dB dynamic range
Lead-free RoHS compliant 3 x 3 x 0.9mm leadless package
■ Internally matched to 50 Ohms and DC blocked RF input/
output
■ Optimized for use in 802.11b/g applications
Device
Electrical Characteristics1 802.11g OFDM Modulation
(176 µs burst time, 100 µs idle time) 54 Mbps Data Rate, 16.7 MHz Bandwidth
Parameter
Min
Frequency
2.4
Collector Supply Voltage
3.0
Typ
Max
Units
2.5
GHz
3.3
3.6
V
Mirror Supply Voltage
2.9
V
Mirror Supply Current
3.3
mA
Gain
31.5
dB
Total Current @ 19dBm POUT
103
mA
EVM @ 19dBm POUT2
2.5
%
Detector Output @ 19dBm POUT
340
mV
5
dBm
Detector Threshold3
Notes:
1. VC1, VC2, VC3 = 3.3V, VM123 = 2.9V, TA = 25°C, PA is constantly biased, 50Ω system.
2. Percentage includes system noise floor of EVM = 0.8%.
3. POUT measured at PIN corresponding to power detection threshold.
©2005 Fairchild Semiconductor Corporation
RMPA2458 Rev. E
1
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RMPA2458 2.4–2.5 GHz InGaP HBT Low Current Linear Power Amplifier
Preliminary
(RF not framed) 11 Mbps Data Rate 22.0 MHz Bandwidth
Parameter
Min
Frequency
2.4
Collector Supply Voltage
3.0
Typ
3.3
Max
Units
2.5
GHz
3.6
V
Mirror Supply Voltage
2.9
V
Mirror Supply Current
3.3
mA
Gain
32
dB
Total Current @ 19dBm Pout
130
mA
First Side Lobe Power @ 19dBm Pout
-36
dBm
Second Side Lobe Power @ 19dBm Pout
-60
dBm
Max Pout Spectral Mask Compliance2
24
dBm
Detector Output @ 19dBm Pout
Detector Pout Threshold3
1.15
V
5
dBm
Electrical Characteristics1 Single Tone
Parameter
Min
Frequency
2.4
Collector Supply Voltage
3.0
Mirror Supply Voltage (VM123)
2.6
Gain
Typ
Max
Units
2.5
GHz
3.3
3.6
V
2.9
3.1
V
31.5
dB
Total Quiescent Current
49
mA
Bias Current at pin VM1234
3.2
mA
P1dB Compression
27
dBm
Current @ P1dB Compression
600
mA
Shutdown Current (VM123 = 0V)
<1.0
µA
12
dB
9
dB
2.4
V
Input Return Loss
Output Return Loss
Detector Output at P1dB Compression
Detector
Pout Threshold3
5
V
Turn-on Time5
<1.0
µS
Spurious (Stability)6
-65
dBc
Notes:
1. VC1, VC2, VC3 = 3.3V, VM123 = 2.9 Volts, Ta = 25°C, PA is constantly biased, 50Ω system.
2. PIN is adjusted to point where performance approaches spectral mask requirements.
3. POUT measured at PIN corresponding to power detection threshold.
4. Mirror bias current is included in the total quiescent current.
5. Measured from Device On signal turn on to the point where RF POUT stabilizes to 0.5dB.
6. Load VSWR is set to 8:1 and the angle is varied 360 degrees. POUT = -30dBm to P1dB.
2
RMPA2458 Rev. E
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RMPA2458 2.4–2.5 GHz InGaP HBT Low Current Linear Power Amplifier
Electrical Characteristics1 802.11b CCK Modulation
Symbol
Parameter
Ratings
Units
VC1, VC2, VC3
Positive Supply Voltage
5
V
IC1, IC2, IC3
Supply Current
IC1
IC2
IC3
50
150
700
mA
mA
mA
VM123
Positive Bias Voltage
3.6
V
PIN
RF Input Power
+5
dBm
TCASE
Case Operating Temperature
-40 to +85
°C
TSTG
Storage Temperature
-55 to +150
°C
Note:
1. No permanent damage with one parameter set at extreme limit. Other parameters set to typical values.
RF IN
GND
VDET
GND
14
13
VOLTAGE
DETECTOR
1
12
2
11
3
4
10
INPUT
MATCH
GND
5
OUTPUT
MATCH
6
7
9
8
3
RMPA2458 Rev. E
VC3
N/C
GND
RF OUT
Pin
Description
1
VM123
2
VC2
3
GND
4
RF IN
5
GND
6
VC1
7
GND
8
GND
9
RF OUT
10
GND
11
N/C
12
VC3
13
GND
14
VDET
15
GND
16
GND
GND
GND
15
GND
VC2
16
VC1
VM123
GND
Functional Block Diagram
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RMPA2458 2.4–2.5 GHz InGaP HBT Low Current Linear Power Amplifier
Absolute Ratings1
RMPA2458 2.4–2.5 GHz InGaP HBT Low Current Linear Power Amplifier
Performance Data 802.11g OFDM Modulation
(176 µs burst time, 100 µs idle time) 54 Mbps Data Rate, 16.7 MHz Bandwidth
Total Measured EVM Vs. Modulated Power Out
VC=3.3V VM=2.9V T=25°C
Gain Vs. Modulated Power Out
VC=3.3V VM=2.9V T=25°C
8
34
Note: Uncorrected EVM. Source EVM is approximately 0.8%.
7
6
32
5
2.40 GHz
2.45 GHz
2.50 GHz
Gain (dB)
Total Measured MVE (%)
33
4
31
3
30
2.40 GHz
2.45 GHz
2.50 GHz
2
29
1
28
0
5
7
9
11
13
15
17
19
21
5
23
7
9
11
13
Modulated Power Out (dBm)
15
17
19
21
23
25
23
25
Modulated Power Out (dBm)
Total Current Vs. Modulated Power Out
VC=3.3V VM=2.9V T=25°C
Detector Voltage Vs. Modulated Power Out
VC=3.3V VM=2.9V T=25°C
260
1400
240
1200
220
Detector Voltage (mV)
Total Current (mA)
200
180
2.40 GHz
2.45 GHz
2.50 GHz
160
140
120
1000
2.40 GHz
2.45 GHz
2.50 GHz
800
600
100
80
400
60
200
40
5
7
9
11
13
15
17
19
21
23
25
5
7
9
11
Modulated Power Out (dBm)
13
15
17
19
21
Modulated Power Out (dBm)
Single Tone
S-Parameters Vs. Frequency
VC=3.3V VM=2.9V T=25°C
Gain Vs. Single Tone Power Out
VC=3.3V VM=2.9V T=25°C
0
35
33
32
S21 (dB)
30
-5
25
-10
2.40 GHz
2.45 GHz
2.50 GHz
29
S11, S22 (dB)
30
S21 (dB)
Gain (dB)
31
28
S11 (dB)
20
-15
S22 (dB)
27
15
26
5
7
9
11
13
15
17
19
21
23
25
27
2.35
2.45
2.5
-20
2.55
Frequency (GHz)
Single Tone Power Out (dBm)
4
RMPA2458 Rev. E
2.4
www.fairchildsemi.com
RMPA2458 2.4–2.5 GHz InGaP HBT Low Current Linear Power Amplifier
Evaluation Board Schematic
16
15
14
13
1
12
2
11
3
10
4
9
5
6
7
8
Backside Ground
Package Outline
Dimensions in mm
Note: Dimensions do not include protrusions or mold flash. These are not to exceed 0.006" (.155mm) on any side.
5
RMPA2458 Rev. E
www.fairchildsemi.com
Qty
Item No.
1
1
F100039
2
2
#142-0701-841
SMA Connector
Johnson
7
3
#S1322-XX-ND
RT Angle Sgl M Header
Digikey
Ref
4
1
5 (C3)
2
6 (C1, C2)
3
7 (C4, C5, C6)
2
Part Number
Description
PC Board
Vendor
Fairchild
F1XXXXX
Assembly, RMPA2458
Fairchild
06035A150J
15pF Capacitor
AVX
GRM39C0G330J50D500
33pF Capacitor
Murata
CC1206JX5R106M
10µF Capacitor
TDK
8 (L2, L3)
LLV1005FB5N6S
5.6nH Inductor
Toko
1
9 (L1)
LLV1005FH15NK
15nH Inductor
Toko
A/R
10
SN63
Solder Paste
Indium Corp.
A/R
11
SN96
Solder Paste
Indium Corp.
Evaluation Board Layout
C5
C6
L3
C2
2458
L2
C1
C3
L1
C4
Actual Board Size = 2.0" X 1.5"
6
RMPA2458 Rev. E
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RMPA2458 2.4–2.5 GHz InGaP HBT Low Current Linear Power Amplifier
Evaluation Board Bill of Materials
Recommended turn-on sequence:
1) Connect common ground terminal to the Ground (GND) pin
on the board.
8) Apply input RF power to SMA connector pin RFIN. Currents
in pins VC1, VC2 and VC3 will vary depending on the input drive
level.
2) Connect voltmeter to pin DT1 (VDET, voltage detector).
9) Vary positive voltage on pin VM123 from +2.9 V to +0 V to
shut down the amplifier or alter the power level. Shut down current flow into the pins:
3) Apply positive supply voltage VC1 (=3.3 V) to pin VC1 (first
stage collector).
4) Apply positive supply voltage VC2 (=3.3 V) to pin VC2 (second stage collector).
Pin
Current
5) Apply positive supply voltage VC3 (=3.3 V) to pin VC3 (third
stage collector).
VC1
<1 nA
VC2
<1 nA
6) Apply positive bias voltage VM123 (=2.9 V) to pin VM123
(bias networks).
VC3
<1 nA
Recommended turn-off sequence:
7) At this point, you should expect to observe the following positive currents flowing into the pins:
Use reverse order described in the turn-on sequence above.
Pin
Current
Note:
VM123
1.0 – 5.0 mA
1. Turn on sequence is not critical and it is not necessary to sequence power supplies in actual system level design
VC1
1.0 – 9.0 mA
VC2
5.0 – 25.0 mA
VC3
22.0 – 42.0 mA
7
RMPA2458 Rev. E
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RMPA2458 2.4–2.5 GHz InGaP HBT Low Current Linear Power Amplifier
Evaluation Board Turn-On Sequence1
CAUTION: THIS IS AN ESD SENSITIVE DEVICE.
Solder Materials & Temperature Profile:
Reflow soldering is the preferred method of SMT attachment.
Hand soldering is not recommended.
Precautions to Avoid Permanent Device Damage:
• Cleanliness: Observe proper handling procedures to ensure
clean devices and PCBs. Devices should remain in their
original packaging until component placement to ensure no
contamination or damage to RF, DC and ground contact
areas.
Reflow Profile
• Ramp-up: During this stage the solvents are evaporated from
the solder paste. Care should be taken to prevent rapid
oxidation (or paste slump) and solder bursts caused by violent
solvent out-gassing. A maximum heating rate is 3°C/sec.
• Device Cleaning: Standard board cleaning techniques should
not present device problems provided that the boards are
properly dried to remove solvents or water residues.
• Pre-heat/soak: The soak temperature stage serves two
purposes; the flux is activated and the board and devices
achieve a uniform temperature. The recommended soak
condition is: 60-180 seconds at 150-200°C.
• Static Sensitivity: Follow ESD precautions to protect against
ESD damage:
– A properly grounded static-dissipative surface on which to
place devices.
• General Handling: Handle the package on the top with a
vacuum collet or along the edges with a sharp pair of bent
tweezers. Avoiding damaging the RF, DC, and ground
contacts on the package bottom. Do not apply excessive
pressure to the top of the lid.
• Reflow Zone: If the temperature is too high, then devices may
be damaged by mechanical stress due to thermal mismatch or
there may be problems due to excessive solder oxidation.
Excessive time at temperature can enhance the formation of
inter-metallic compounds at the lead/board interface and may
lead to early mechanical failure of the joint. Reflow must occur
prior to the flux being completely driven off. The duration of
peak reflow temperature should not exceed 20 seconds.
Soldering temperatures should be in the range 255–260°C,
with a maximum limit of 260°C.
• Device Storage: Devices are supplied in heat-sealed,
moisture-barrier bags. In this condition, devices are protected
and require no special storage conditions. Once the sealed
bag has been opened, devices should be stored in a dry
nitrogen environment.
• Cooling Zone: Steep thermal gradients may give rise to
excessive thermal shock. However, rapid cooling promotes a
finer grain structure and a more crack-resistant solder joint.
The illustration below indicates the recommended soldering
profile.
Device Usage:
Fairchild recommends the following procedures prior to
assembly.
Solder Joint Characteristics:
Proper operation of this device depends on a reliable void-free
attachment of the heat sink to the PWB. The solder joint should
be 95% void-free and be a consistent thickness.
– Static-dissipative floor or mat.
– A properly grounded conductive wrist strap for each person
to wear while handling devices.
• Assemble the devices within one year of removal from the dry
pack.
Rework Considerations:
Rework of a device attached to a board is limited to reflow of the
solder with a heat gun. The device should be subjected to no
more than 15°C above the solder melting temperature for no
more than 5 seconds. No more than 2 rework operations should
be performed.
• During the one year period, the devices must be stored in an
environment of less than 60% relative humidity and a
maximum temperature of 30°C
• If the one year period or the environmental conditions have
been exceeded, then the dry-bake procedure, at 125°C for 24
hours minimum, must be performed.
Recommended Solder Reflow Profile
Peak tem p
260 +0/-5 °C
10 - 20 sec
260
Temperature (°C)
Ramp-Up R ate
3 °C/sec max
217
200
Time above
li quidus temp
60 - 150 sec
150
Preheat, 150 to 200 °C
60 - 180 sec
100
Ramp-Up R ate
3 °C/sec max
Ramp-Do wn Rate
6 °C/sec max
50
25
Time 25 °C/sec t o peak tem p
6 mi nutes max
Time (Sec)
8
RMPA2458 Rev. E
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RMPA2458 2.4–2.5 GHz InGaP HBT Low Current Linear Power Amplifier
Applications Information
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
FAST
ActiveArray™
FASTr™
Bottomless™
FPS™
Build it Now™
FRFET™
CoolFET™
GlobalOptoisolator™
CROSSVOLT™ GTO™
DOME™
HiSeC™
EcoSPARK™
I2C™
E2CMOS™
i-Lo™
EnSigna™
ImpliedDisconnect™
FACT™
IntelliMAX™
FACT Quiet Series™
Across the board. Around the world.™
The Power Franchise
Programmable Active Droop™
ISOPLANAR™
LittleFET™
MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
OCX™
OCXPro™
OPTOLOGIC
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerEdge™
PowerSaver™
PowerTrench
QFET
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
µSerDes™
SILENT SWITCHER
SMART START™
SPM™
Stealth™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic
TINYOPTO™
TruTranslation™
UHC™
UltraFET
UniFET™
VCX™
Wire™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
2. A critical component is any component of a life
1. Life support devices or systems are devices or
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I16
9
RMPA2458 Rev. E
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RMPA2458 2.4–2.5 GHz InGaP HBT Low Current Linear Power Amplifier
TRADEMARKS