DE150-102N02A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 Tc = 25°C 2 A IDM Tc = 25°C, pulse width limited by TJM 12 A IAR Tc = 25°C 1.5 A EAR Tc = 25°C 6 mJ IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.2Ω 3 V/ns dv/dt >200 V/ns 200 W 105 W 3.5 W RthJC 0.71 C/W RthJHS 1.41 C/W IS = 0 PDC PDHS Tc = 25°C Derate .7W/°C above 25°C PDAMB Tc = 25°C Symbol Test Conditions TJ = 25°C unless otherwise specified VDSS VGS = 0 V, ID = 3 ma VGS(th) VDS = VGS, ID = 4 ma IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = 0.8 VDSS TJ = 25°C VGS = 0 TJ = 125°C RDS(on) VGS = 15 V, ID = 0.5ID25 Pulse test, t ≤ 300µS, duty cycle d ≤ 2% gfs VDS = 15 V, ID = 0.5ID25, pulse test V 2.5 0.8 1.6mm (0.063 in) from case for 10 s ID25 = 2A RDS(on) = 7.8 Ω PDC = 200W DRAIN GATE SG1 SG2 SD1 SD2 • Isolated Substrate − high isolation voltage (>2500V) − excellent thermal transfer − Increased temperature and power cycling capability IXYS advanced low Qg process 4.5 V ±100 nA 50 500 µA µA 7.8 Ω S Advantages 2 +175 -55 Tstg 1000 V • • − − • • • 175 TJM Weight max. 1000 -55 TJ TL typ. = Features Characteristic Values min. VDSS +175 Low gate charge and capacitances easier to drive faster switching Low RDS(on) Very low insertion inductance (<2nH) No beryllium oxide (BeO) or other hazardous materials °C • Optimized for RF and high speed °C • Easy to mount—no insulators needed • High power density °C 300 °C 2 g switching at frequencies to 30MHz DE150-102N02A RF Power MOSFET Symbol Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) min. typ. max. Ciss Coss VGS = 0 V, VDS = 0.8 VDSS(max), f = 1 MHz 500 pF 150 pF 3 pF 16 pF 4 ns 4 ns 4 ns 4 ns 23 nC 4.5 nC 14 nC Crss CStray Back Metal to any Pin Td(on) Ton Td(off) VGS = 15 V, VDS = 0.8 VDSS ID = 0.5 IDM RG = 0.2 Ω (External) Toff Qg(on) Qgs Ω 5 RG VGS = 10 V, VDS = 0.5 VDSS ID = 0.5 ID25 Qgd Source-Drain Diode Characteristic Values (TJ = 25°C unless otherwise specified) Symbol Test Conditions min. IS VGS = 0 V ISM Repetitive; pulse width limited by TJM VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2% typ. max. 1.5 A 12 A 1.8 V 710 Trr ns For detailed device mounting and installation instructions, see the “DESeries MOSFET Mounting Instructions” technical note on IXYS RF’s web site at www.ixysrf.com/Technical_Support/App_notes.html IXYS RF reserves the right to change limits, test conditions and dimensions. IXYS RF MOSFETS are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,891,686 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 5,640,045 DE150-102N02A RF Power MOSFET 10000 Ciss Coss Crss Capacitance in pF 1000 100 10 1 0 100 200 300 400 500 600 Vds in Volts Capacitances vs Vds 700 800 900 1000 DE150-102N02A RF Power MOSFET 102N02A DE-SERIES SPICE Model The DE-SERIES SPICE Model is illustrated in Figure 1. The model is an expansion of the SPICE level 3 MOSFET model. It includes the stray inductive terms LG, LS and LD. Rd is the RDS(ON) of the device, Rds is the resistive leakage term. The output capacitance, COSS, and reverse transfer capacitance, CRSS are modeled with reversed biased diodes. This provides a varactor type response necessary for a high power device model. The turn on delay and the turn off delay are adjusted via Ron and Roff. Figure 1 DE-SERIES SPICE Model This SPICE model may be downloaded as a text file from the DEI web site at www.directedenergy.com/spice.htm Net List: *SYM=POWMOSN .SUBCKT 102N02A 10 20 30 * TERMINALS: D G S * 1000 Volt 1.4 Amp 7.8 ohm N-Channel Power MOSFET 10-30-2000 M1 1 2 3 3 DMOS L=1U W=1U RON 5 6 4.0 DON 6 2 D1 ROF 5 7 2.0 DOF 2 7 D1 D1CRS 2 8 D2 D2CRS 1 8 D2 CGS 2 3 500Pf RD 4 1 7.8 DCOS 3 1 D3 RDS 1 3 5.0MEG LS 3 30 .5N LD 10 4 1N LG 20 5 1N .MODEL DMOS NMOS (LEVEL=3 VTO=3 KP=.3) .MODEL D1 D (IS=.5F CJO=10P BV=100 M=.5 VJ=.2 TT=1N) .MODEL D2 D (IS=.5F CJO=100P BV=1000 M=.6 VJ=.6 TT=1N RS=10M) .MODEL D3 D (IS=.5F CJO=150P BV=1000 M=.35 VJ=.6 TT=400N RS=10M) .ENDS Doc #9200-0239 Rev 3 © 2003 IXYS RF An IXYS Company 2401 Research Blvd., Suite 108 Fort Collins, CO USA 80526 970-493-1901 Fax: 970-493-1903 Email: [email protected] Web: http://www.directedenergy.com