PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH18N90P IXFT18N90P IXFV18N90P IXFV18N90PS VDSS ID25 = = ≤ ≤ RDS(on) trr 900V 18A Ω 600mΩ 300ns TO-247 (IXFH) G D D (TAB) S TO-268 (IXFT) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 900 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 900 V VGSS Continuous ± 30 V VGSM Transient ± 40 V ID25 TC = 25°C 18 A IDM TC = 25°C, Pulse Width Limited by TJM 36 A IA TC = 25°C 9 A EAS TC = 25°C 800 mJ dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 15 V/ns PD TC = 25°C 540 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C TJ G S D (TAB) PLUS220 (IXFV) G D S D (TAB) PLUS220SMD (IXFV_S) G G = Gate S = Source TL Maximum Lead Temperature for Soldering 300 °C TSOLD Plastic Body for 10s 260 °C Md Mounting Torque (TO-247) 1.13/10 Nm/lb.in. z FC Mounting Force (PLUS220) 11..65/2.5..14.6 N/lb. z Weight TO-247 TO-268 PLUS220 types 6 4 4 g g g S D (TAB) D = Drain TAB = Drain Features z z International Standard Packages Avalanche Rated Low Package Inductance Fast Intrinsic Diode Advantages Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 900 VGS(th) VDS = VGS, ID = 1mA 3.0 IGSS VGS = ± 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 TJ = 125°C © 2009 IXYS CORPORATION, All Rights Reserved z z z V Applications 6.0 V ± 100 nA z 25 μA 1.5 mA z 600 mΩ High Power Density Easy to Mount Space Savings z z z Switched-Mode and Resonant-Mode Power Supplies DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo Controls DS100057A(9/09) IXFH18N90P IXFV18N90P IXFT18N90P IXFV18N90PS Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs VDS = 20V, ID = 0.5 • ID25, Note 1 6 RGi Gate Input Resistance Ciss Coss 10 S 1.2 Ω 5230 pF 366 pF 53 pF 40 ns VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 2Ω (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 33 ns 60 ns 44 ns 97 nC 30 nC 40 nC 0.23 °C/W RthJC RthCS (TO-247, PLUS220) 0.25 °C/W Source-Drain Diode Characteristic Values Min. Typ. Max. TJ = 25°C Unless Otherwise Specified) IS VGS = 0V 18 A ISM Repetitive, Pulse Width Limited by TJM 72 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr QRM IRM 300 ns IF = 9A, -di/dt = 100A/μs VR = 100V, VGS = 0V 1.0 μC 10.8 A Note 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFH18N90P IXFV18N90P IXFT18N90P IXFV18N90PS Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics @ T J = 25ºC 18 VGS = 10V 9V 8V 16 VGS = 10V 9V 36 32 14 28 ID - Amperes 12 ID - Amperes @ T J = 25ºC 40 7V 10 8 6 8V 24 20 7V 16 12 6V 4 8 6V 2 4 5V 5V 0 0 0 1 2 3 4 5 6 7 8 9 0 10 3 6 9 12 @ T J = 125ºC 21 24 27 30 3.0 VGS = 10V 9V 8V 16 18 Fig. 4. RDS(on) Normalized to ID = 9A Value vs. Junction Temperature Fig. 3. Output Characteristics 18 15 VDS - Volts VDS - Volts VGS = 10V 2.6 R DS(on) - Normalized ID - Amperes 14 7V 12 10 8 6V 6 2.2 I D = 18A 1.8 I D = 9A 1.4 1.0 4 0.6 5V 2 0 0.2 0 2 4 6 8 10 12 14 16 18 20 22 -50 24 -25 0 VDS - Volts Fig. 5. RDS(on) Normalized to ID = 9A Value vs. Drain Current 50 75 100 125 150 125 150 Fig. 6. Maximum Drain Current vs. Case Temperature 20 3.0 18 VGS = 10V 2.6 TJ = 125ºC 16 14 2.2 ID - Amperes R DS(on) - Normalized 25 TJ - Degrees Centigrade 1.8 1.4 12 10 8 6 4 TJ = 25ºC 1.0 2 0.6 0 0 4 8 12 16 20 24 ID - Amperes © 2009 IXYS CORPORATION, All Rights Reserved 28 32 36 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFH18N90P IXFV18N90P IXFT18N90P IXFV18N90PS Fig. 8. Transconductance Fig. 7. Input Admittance 32 18 28 16 14 24 25ºC 20 g f s - Siemens ID - Amperes TJ = - 40ºC TJ = 125ºC 25ºC - 40ºC 16 12 12 10 8 125ºC 8 6 4 4 2 0 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 0 4 8 12 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 20 24 28 32 Fig. 10. Gate Charge 60 10 VDS = 450V 9 50 I D = 9A 8 I G = 10mA 7 VGS - Volts 40 IS - Amperes 16 ID - Amperes 30 20 TJ = 125ºC 6 5 4 3 2 TJ = 25ºC 10 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 10 20 VSD - Volts 30 40 50 60 70 80 90 100 QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 1.00 10,000 1,000 Z(th)JC - ºC / W Capacitance - PicoFarads Ciss Coss 0.10 100 Crss f = 1 MHz 10 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.01 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXFH18N90P IXFV18N90P IXFT18N90P IXFV18N90PS TO-247 (IXFH) Outline PLUS220 (IXFV) Outline E E1 A A1 L2 E1 D1 D ∅P 1 2 L3 3 L1 L 3X b 2X e Terminals: 1 - Gate 3 - Source Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC A2 Terminals: 1-Gate 2-Drain 2 - Drain Tab - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC c A A1 A2 b c D D1 E E1 e L L1 L2 L3 PLUS220SMD (IXFV_S) Outline TO-268 (IXFT) Outline © 2009 IXYS CORPORATION, All Rights Reserved IXYS REF: F_18N90P(76)9-11-09-A