PolarTM Power MOSFET HiPerFETTM IXFR26N100P VDSS ID25 RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000 V VGSS Continuous ± 30 V VGSM Transient ± 40 V ID25 TC = 25°C 15 A IDM TC = 25°C, pulse width limited by TJM 65 A IAR EAS TC = 25°C TC = 25°C 13 1 A J dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 15 V/ns PD TC = 25°C 290 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C = 1000V = 15A ≤ 430mΩ Ω ≤ 300ns Maximum Ratings TJ TL Maximum lead temperature for soldering 300 °C TSOLD Plastic body for 10s 260 °C VISOL 50/60 Hz, RMS, 1 minute 2500 V~ FC Mounting force 20..120/4.5..27 N/lb. 5 g Weight ISOPLUS247 (IXFR) E153432 Isolated Tab G = Gate D S = Source = Drain Features • Silicon chip on Direct-Copper-Bond • • • • substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low drain to tab capacitance(<30pF) Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Fast intrinsic Rectifier Applications • Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 1000 VGS(th) VDS = VGS, ID = 1mA 3.5 IGSS VGS = ± 30V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) VGS = 10V, ID = 13A, Note 1 TJ = 125°C © 2008 IXYS CORPORATION, All rights reserved • • • • Switched-mode and resonant-mode power supplies DC-DC converters Laser Drivers AC and DC motor controls Robotics and servo controls V Advantages 6.5 V ± 200 nA • • • Easy assembly Space savings High power density 25 μA 2 mA 430 mΩ DS99882A(4/08) IXFR26N100P Symbol Test Conditions (TJ = 25°C unless otherwise specified) gfs Characteristic Values Min. Typ. Max. VDS = 20V, ID = 13A, Note 1 13 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss ISOPLUS247 (IXFR) Outline 22 S 11.9 nF 690 pF 60 pF 1.50 Ω 45 ns RGi Gate input resistance td(on) Resistive Switching Times tr VGS = 10V, VDS = 0.5 • VDSS, ID = 13A 45 ns td(off) RG = 1Ω (External) 72 ns 50 ns 197 nC 76 nC 85 nC tf Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 13A Qgd 0.43 °C/W RthJC RthCS 0.15 Source-Drain Diode TJ = 25°C unless otherwise specified) IS VGS = 0V ISM VSD trr QRM IRM °C/W Characteristic Values Min. Typ. Max. 26 A Repetitive, pulse width limited by TJM 104 A IF = IS, VGS = 0V, Note 1 1.5 V 300 ns IF = 13A, -di/dt = 100A/μs VR = 100V, VGS = 0V 1.2 μC 12 A Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFR26N100P Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 28 70 VGS = 10V 9V 24 60 50 ID - Amperes ID - Amperes 20 VGS = 10V 16 8V 12 8 9V 40 30 20 4 8V 10 7V 7V 0 0 0 1 2 3 4 5 6 7 8 9 0 5 10 15 20 25 30 VDS - Volts VDS - Volts Fig. 3. Output Characteristics @ 125ºC Fig. 4. RDS(on) Normalized to I D = 13A Value vs. Junction Temperature 28 3.0 VGS = 10V 9V 24 2.8 VGS = 10V 2.6 RDS(on) - Normalized 2.4 ID - Amperes 20 16 12 8V 8 2.2 I D = 26A 2.0 1.8 I D = 13A 1.6 1.4 1.2 1.0 0.8 4 7V 0.6 0 0.4 0 2 4 6 8 10 12 14 16 18 20 -50 -25 0 VDS - Volts 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 13A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 2.8 16 VGS = 10V 2.6 TJ = 125ºC 14 12 2.2 ID - Amperes RDS(on) - Normalized 2.4 2.0 1.8 1.6 10 8 6 1.4 4 1.2 TJ = 25ºC 2 1.0 0 0.8 0 5 10 15 20 25 30 35 40 ID - Amperes © 2008 IXYS CORPORATION, All rights reserved 45 50 55 60 65 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXFR26N100P Fig. 8. Transconductance Fig. 7. Input Admittance 40 50 45 35 40 25 g f s - Siemens ID - Amperes 30 TJ = 125ºC 25ºC - 40ºC 20 15 35 TJ = - 40ºC 25ºC 125ºC 30 25 20 15 10 10 5 5 0 0 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 0 9.0 5 10 15 VGS - Volts 25 30 35 40 Fig. 10. Gate Charge 80 16 70 14 60 12 50 10 VGS - Volts IS - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode 40 TJ = 125ºC 30 20 ID - Amperes VDS = 500V I D = 13A I G = 10mA 8 6 TJ = 25ºC 20 4 2 10 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 1.2 40 VSD - Volts 80 120 160 200 240 280 QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 100,000 1.000 f = 1 MHz 10,000 Z(th)JC - ºC / W Capacitance - PicoFarads Ciss Coss 1,000 0.100 0.010 100 Crss 10 0 5 10 15 20 25 30 35 40 VDS - Volts 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: F_26N100P(86)3-28-08-B