IXYS IXFR26N100P

PolarTM Power MOSFET
HiPerFETTM
IXFR26N100P
VDSS
ID25
RDS(on)
trr
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
Test Conditions
VDSS
TJ = 25°C to 150°C
1000
V
VDGR
TJ = 25°C to 150°C, RGS = 1MΩ
1000
V
VGSS
Continuous
± 30
V
VGSM
Transient
± 40
V
ID25
TC = 25°C
15
A
IDM
TC = 25°C, pulse width limited by TJM
65
A
IAR
EAS
TC = 25°C
TC = 25°C
13
1
A
J
dV/dt
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
15
V/ns
PD
TC = 25°C
290
W
-55 ... +150
°C
TJM
150
°C
Tstg
-55 ... +150
°C
= 1000V
= 15A
≤ 430mΩ
Ω
≤ 300ns
Maximum Ratings
TJ
TL
Maximum lead temperature for soldering
300
°C
TSOLD
Plastic body for 10s
260
°C
VISOL
50/60 Hz, RMS, 1 minute
2500
V~
FC
Mounting force
20..120/4.5..27
N/lb.
5
g
Weight
ISOPLUS247 (IXFR)
E153432
Isolated Tab
G = Gate
D
S = Source
= Drain
Features
• Silicon chip on Direct-Copper-Bond
•
•
•
•
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low drain to tab capacitance(<30pF)
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Fast intrinsic Rectifier
Applications
•
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
Characteristic Values
Min.
Typ. Max.
BVDSS
VGS = 0V, ID = 3mA
1000
VGS(th)
VDS = VGS, ID = 1mA
3.5
IGSS
VGS = ± 30V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
RDS(on)
VGS = 10V, ID = 13A, Note 1
TJ = 125°C
© 2008 IXYS CORPORATION, All rights reserved
•
•
•
•
Switched-mode and resonant-mode
power supplies
DC-DC converters
Laser Drivers
AC and DC motor controls
Robotics and servo controls
V
Advantages
6.5
V
± 200
nA
•
•
•
Easy assembly
Space savings
High power density
25 μA
2 mA
430 mΩ
DS99882A(4/08)
IXFR26N100P
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
gfs
Characteristic Values
Min.
Typ.
Max.
VDS = 20V, ID = 13A, Note 1
13
Ciss
Coss
VGS = 0V, VDS = 25V, f = 1MHz
Crss
ISOPLUS247 (IXFR) Outline
22
S
11.9
nF
690
pF
60
pF
1.50
Ω
45
ns
RGi
Gate input resistance
td(on)
Resistive Switching Times
tr
VGS = 10V, VDS = 0.5 • VDSS, ID = 13A
45
ns
td(off)
RG = 1Ω (External)
72
ns
50
ns
197
nC
76
nC
85
nC
tf
Qg(on)
Qgs
VGS = 10V, VDS = 0.5 • VDSS, ID = 13A
Qgd
0.43 °C/W
RthJC
RthCS
0.15
Source-Drain Diode
TJ = 25°C unless otherwise specified)
IS
VGS = 0V
ISM
VSD
trr
QRM
IRM
°C/W
Characteristic Values
Min.
Typ.
Max.
26
A
Repetitive, pulse width limited by TJM
104
A
IF = IS, VGS = 0V, Note 1
1.5
V
300 ns
IF = 13A, -di/dt = 100A/μs
VR = 100V, VGS = 0V
1.2
μC
12
A
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXFR26N100P
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
28
70
VGS = 10V
9V
24
60
50
ID - Amperes
ID - Amperes
20
VGS = 10V
16
8V
12
8
9V
40
30
20
4
8V
10
7V
7V
0
0
0
1
2
3
4
5
6
7
8
9
0
5
10
15
20
25
30
VDS - Volts
VDS - Volts
Fig. 3. Output Characteristics
@ 125ºC
Fig. 4. RDS(on) Normalized to I D = 13A Value
vs. Junction Temperature
28
3.0
VGS = 10V
9V
24
2.8
VGS = 10V
2.6
RDS(on) - Normalized
2.4
ID - Amperes
20
16
12
8V
8
2.2
I D = 26A
2.0
1.8
I D = 13A
1.6
1.4
1.2
1.0
0.8
4
7V
0.6
0
0.4
0
2
4
6
8
10
12
14
16
18
20
-50
-25
0
VDS - Volts
25
50
75
100
125
150
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 13A Value
vs. Drain Current
Fig. 6. Maximum Drain Current vs.
Case Temperature
2.8
16
VGS = 10V
2.6
TJ = 125ºC
14
12
2.2
ID - Amperes
RDS(on) - Normalized
2.4
2.0
1.8
1.6
10
8
6
1.4
4
1.2
TJ = 25ºC
2
1.0
0
0.8
0
5
10
15
20
25
30
35
40
ID - Amperes
© 2008 IXYS CORPORATION, All rights reserved
45
50
55
60
65
-50
-25
0
25
50
75
TC - Degrees Centigrade
100
125
150
IXFR26N100P
Fig. 8. Transconductance
Fig. 7. Input Admittance
40
50
45
35
40
25
g f s - Siemens
ID - Amperes
30
TJ = 125ºC
25ºC
- 40ºC
20
15
35
TJ = - 40ºC
25ºC
125ºC
30
25
20
15
10
10
5
5
0
0
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
0
9.0
5
10
15
VGS - Volts
25
30
35
40
Fig. 10. Gate Charge
80
16
70
14
60
12
50
10
VGS - Volts
IS - Amperes
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
40
TJ = 125ºC
30
20
ID - Amperes
VDS = 500V
I D = 13A
I G = 10mA
8
6
TJ = 25ºC
20
4
2
10
0
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
0
1.2
40
VSD - Volts
80
120
160
200
240
280
QG - NanoCoulombs
Fig. 12. Maximum Transient Thermal
Impedance
Fig. 11. Capacitance
100,000
1.000
f = 1 MHz
10,000
Z(th)JC - ºC / W
Capacitance - PicoFarads
Ciss
Coss
1,000
0.100
0.010
100
Crss
10
0
5
10
15
20
25
30
35
40
VDS - Volts
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS REF: F_26N100P(86)3-28-08-B